Low-Temperature Polymer Removal to Boost Solution Processed Carbon Nanotube Thin Film Transistor Performance

Abstract

Carbon nanotubes (CNTs) offer exceptional electrical properties for the next-generation thin-film transistors (TFTs). However, the residual conjugated polymers introduced from the solution processes degrade the device performance. Here, a low-temperature (below 150 °C) post-treatment method is developed to remove wrapping polymers from CNT while preserving CNT integrity (G⁺/D ratio: 18.17 to 16.97). This silicon-compatible technique avoids harsh chemicals and high-temperature annealing, simultaneously improving the devices performance (2.9× higher mobility, 2.4× higher on-current, and lower subthreshold swing), and uniformity. This low-temperature, acid-free approach facilitates the application of CNT TFTs in wearable electronics and display backplanes.