DMSO-tailored microstructure engineering of melt-extruded PFSIE membranes for efficient chlor-alkali electrolysis

IF 5.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Jianlong Lei , Libin Qian , Panpan Guan , Guixue Liang , Nan Wang , Yuan Li , Qipeng Guo
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引用次数: 0

Abstract

Perfluorosulfonic acid ion-exchange membranes (PFSIEMs) act as core components in chlor-alkali electrolysis, but the inadequate microstructure control of melt-extruded Na-type PFSIEMs remains a critical bottleneck restricting their performance. Herein, we propose a DMSO-assisted microstructure regulation strategy through direct melt-extrusion of perfluorosulfonyl fluoride precursors, which allows for precise modulation of membrane microstructures while notably boosting hydrolysis efficiency. Structural characterizations indicate that the optimized membranes feature reduced crystallinity, enhanced orderliness of ion channels with narrowed spacing, and an increased free volume fraction. These microstructural improvements result in remarkable performance enhancements, the parallel-to-draw and perpendicular-to-draw conductivities of the best-performing membrane are increased by 79.5% and 43.0% respectively, the NaCl permeability coefficient is improved by 223.7%, and the energy consumption for producing one ton of NaOH is reduced by 149.4 kWh/t compared to the pristine P-Na-0% membrane. This study provides a universal design framework for tailoring PFSIEMs to diverse application scenarios, where specific performance requirements can be precisely met through controlled microstructure modulation.
用于高效氯碱电解的熔融挤出PFSIE膜的dmso定制微结构工程
全氟磺酸离子交换膜(PFSIEMs)是氯碱电解的核心部件,但熔融挤压钠型PFSIEMs的微观结构控制不足仍然是制约其性能的关键瓶颈。在此,我们提出了一种dmso辅助的微观结构调节策略,通过直接熔融挤出全氟磺酰氟前体,可以精确调节膜的微观结构,同时显著提高水解效率。结构表征表明,优化后的膜具有结晶度降低、离子通道有序性增强、间距缩小、自由体积分数增加等特点。这些微观结构的改进带来了显著的性能提升,性能最佳的膜的平行拉伸电导率和垂直拉伸电导率分别提高了79.5%和43.0%,NaCl渗透系数提高了223.7%,生产1吨NaOH的能耗比原始P-Na-0%的膜降低了149.4 kWh/t。本研究提供了一个通用的设计框架,可以根据不同的应用场景定制pfsiem,通过可控的微观结构调制可以精确满足特定的性能要求。
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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