Electrically Configured Analog Signal Modulation and Logic Operation With Dual-Doped RFET

IF 2.1 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Nanotechnology Pub Date : 2026-01-20 DOI:10.1109/TNANO.2026.3656188

Sandeep Semwal;Pin Su;Abhinav Kranti

引用次数: 0

Abstract

This paper proposes and analyzes various configurations of dual-doped (DD) reconfigurable field-effect transistors (RFET) that enable operation as p-type, n-type, and ambipolar operational modes through electrical connections of electrodes. This versatility, achieved through a single DD-RFET, is harnessed by demonstrating applications for analog design (frequency-doubling, phase-reversal, and phase-following applications) and logic operations (NOT, OR, NAND, and XOR). DD-RFET enables the realization of analog and logic blocks through a single device paving the way for area-efficient multifunctional processors.

查看原文本刊更多论文

电组态模拟信号调制和逻辑运算与双掺杂RFET

本文提出并分析了双掺杂（DD）可重构场效应晶体管（RFET）的各种配置，通过电极的电连接可以实现p型、n型和双极性工作模式。通过单个DD-RFET实现的这种多功能性，通过演示模拟设计（倍频，相位反转和相位跟踪应用）和逻辑运算（NOT， OR， NAND和XOR）的应用来利用。DD-RFET能够通过单个器件实现模拟和逻辑块，为面积高效的多功能处理器铺平了道路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE Transactions on Nanotechnology 工程技术-材料科学：综合

CiteScore

4.80

自引率

8.30%

发文量

审稿时长

8.3 months

期刊介绍： The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.