Ag-Cu2O nano composite: A comprehensive study on Ag concentration effect on physical properties for a two-band laser detector

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2026-06-01 Epub Date: 2026-01-27 DOI:10.1016/j.sse.2026.109342

Evan T. Salim , Rana O. Mahdi , Roaa A. Abbas , Zaid T. Salim , Subash C.B. Gopinath , Ahmed A. Al-Amiery

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引用次数: 0

Abstract

Hydrothermally formed silver-decorated cuprous oxide thin films were synthesized at different Ag concentrations. The optimum condition sample was used for the formation of high-performance optoelectronic devices, which show enhancements in the pure Cu₂O/p-Si heterojunction device. Structural properties studied by XRD show successful decoration on the Cu2O surface, with Ag decoration inducing a controlled reduction in Cu₂O crystallite size (33.4 to 30.4 nm). Notably, silver decoration produced a strategy for band gap narrowing from 2.29 to 2.12 eV, while SERS analysis shows signal enhancement for Ag decorated cuprous oxide in comparison with pure Cu2O.

The optimum condition was obtained from a sample of 0.01 g, which was used for the synthesis of Ag@Cu₂O/p-Si heterojunction to enhance the photodetector properties, including a responsivity, detectivity, and quantum efficiency. The built-in potential of 1.4 V compared with pure Cu₂O/p-Si. This configuration of the device produces an enhancement in the responsivity across the visible to near-IR spectrum.

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Ag- cu2o纳米复合材料：Ag浓度对双波段激光探测器物理性能影响的综合研究

在不同的银浓度下，水热法制备了镀银氧化亚铜薄膜。采用最佳条件制备的样品制备了高性能光电子器件，在纯Cu2O/p-Si异质结器件中表现出增强效应。XRD分析表明，在Cu2O表面进行了成功的修饰，Ag修饰使Cu2O晶粒尺寸可控地减小（33.4 ~ 30.4 nm）。值得注意的是，银修饰使带隙从2.29 eV缩小到2.12 eV，而SERS分析显示，与纯Cu2O相比，银修饰的氧化亚铜的信号增强。在0.01 g的样品中获得了最佳条件，并将其用于合成Ag@Cu2O/p-Si异质结，以提高光电探测器的性能，包括响应率，探测率和量子效率。与纯Cu2O/p-Si相比，其内置电位为1.4 V。该设备的这种配置产生了在整个可见到近红外光谱的响应性增强。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.