Warm white electrical sensitivities of pentacene-based Schottky photodiode

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2026-04-01 Epub Date: 2025-12-29 DOI:10.1016/j.sse.2025.109327

Ghusoon M. Ali , Kahtan Adnan Hussain , Shahad T. Armoot

{"title":"Warm white electrical sensitivities of pentacene-based Schottky photodiode","authors":"Ghusoon M. Ali , Kahtan Adnan Hussain , Shahad T. Armoot","doi":"10.1016/j.sse.2025.109327","DOIUrl":null,"url":null,"abstract":"<div><div>This study investigates the electrical sensitivities of warm white Al/pentacene/p-Si/Pd Schottky photodiodes with respect to current–voltage (I-V), capacitance–voltage (C-V), and conductance-voltage (G-V) characteristics. The pentacene thin film is deposited using the vacuum thermal evaporation technique. The energy level parameters of the Schottky junction are estimated through energy band diagrams. Two models are introduced to analyze the forward I-V characteristics of the pentacene Schottky diode: the thermionic emission theory and the space-charge-limited current model, both of which explain the mechanisms of charge carrier transport. The I-V, C-V, and G-V characteristics were examined under both dark and warm white illumination conditions, across a voltage range of −4 to 4 V at room temperature. Moreover, a study was conducted to assess, extract, and compare the sensitivities of current (S<sub>I</sub>), capacitance (S<sub>C</sub>), and conductance (S<sub>CO</sub>). The maximum S<sub>I</sub> is 1682 % at 0 V. Therefore, the proposed device demonstrates outstanding performance as a self-powered photodetector. The maximum S<sub>C</sub> is 38 % at −2.1 V, and S<sub>CO</sub> is 370 % at −1.6 V. The variations in sensitivity values are attributed to the different detection mechanisms employed. Overall, the results demonstrate the significant potential of the current-mode Schottky pentacene diode for use as a warm white self-powered photodetector.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"233 ","pages":"Article 109327"},"PeriodicalIF":1.4000,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110125002722","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2025/12/29 0:00:00","PubModel":"Epub","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

This study investigates the electrical sensitivities of warm white Al/pentacene/p-Si/Pd Schottky photodiodes with respect to current–voltage (I-V), capacitance–voltage (C-V), and conductance-voltage (G-V) characteristics. The pentacene thin film is deposited using the vacuum thermal evaporation technique. The energy level parameters of the Schottky junction are estimated through energy band diagrams. Two models are introduced to analyze the forward I-V characteristics of the pentacene Schottky diode: the thermionic emission theory and the space-charge-limited current model, both of which explain the mechanisms of charge carrier transport. The I-V, C-V, and G-V characteristics were examined under both dark and warm white illumination conditions, across a voltage range of −4 to 4 V at room temperature. Moreover, a study was conducted to assess, extract, and compare the sensitivities of current (S_I), capacitance (S_C), and conductance (S_CO). The maximum S_I is 1682 % at 0 V. Therefore, the proposed device demonstrates outstanding performance as a self-powered photodetector. The maximum S_C is 38 % at −2.1 V, and S_CO is 370 % at −1.6 V. The variations in sensitivity values are attributed to the different detection mechanisms employed. Overall, the results demonstrate the significant potential of the current-mode Schottky pentacene diode for use as a warm white self-powered photodetector.

Abstract Image

查看原文本刊更多论文

五苯基肖特基光电二极管的暖白色电灵敏度

本研究考察了暖白色Al/pentacene/p-Si/Pd肖特基光电二极管在电流电压（I-V）、电容电压（C-V）和电导电压（G-V）特性方面的电灵敏度。采用真空热蒸发技术制备了并五苯薄膜。利用能带图估计了肖特基结的能级参数。引入了热离子发射理论和空间电荷限制电流模型两种模型来分析并苯肖特基二极管的正向I-V特性，这两种模型都解释了载流子输运的机理。在室温下，在−4到4 V的电压范围内，在黑暗和温暖的白色照明条件下，研究了I-V、C-V和G-V特性。此外，还进行了一项研究，以评估、提取和比较电流（SI）、电容（SC）和电导（SCO）的灵敏度。在0 V时，最大SI为1682 %。因此，所提出的器件表现出作为自供电光电探测器的出色性能。在−2.1 V时最大SC为38 %，在−1.6 V时最大SCO为370 %。灵敏度值的变化归因于所采用的不同检测机制。总的来说，结果证明了电流模式肖特基五苯二极管作为暖白色自供电光电探测器的巨大潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.