Application of forksheet transistor in operational transconductance amplifier

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2026-04-01 Epub Date: 2026-01-01 DOI:10.1016/j.sse.2025.109330

Joao Antonio Martino , Julius Andretti Peixoto Pires de Paula , Paula Ghedini Der Agopian , Romain Ritzenthaler , Hans Mertens , Anabela Veloso , Naoto Horiguchi

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Abstract

This work presents, for the first time, experimental data on forksheet transistor used in the design of operational transconductance amplifiers (OTA), highlighting their potential for application in analog circuits. The OTA was designed for three different transistor efficiencies: gm/I_D of 5, 8 and 11 V⁻¹. The experimental n-type forksheet used in this work presents a sheet thickness of H_FS = 7 nm, sheet width of W_FS = 23 nm and a transistor channel length of L_G = 70 nm. When the gm/I_D increases from 5 to 11 V⁻¹, the drain current and the transconductance decrease, which improves the OTA voltage gain (Av ∝ gm/I_D) from 49 dB to 63 dB, the total power dissipation (Power ∝ I_D) also improves (decreases) from 528 μW to 129 μW, while degrades the Gain-Bandwidth Product (GBW) from 343 MHz to 196 MHz (GBW ∝ gm). Depending on the application, the OTA bias conditions must be set appropriately due to the trade-off between Av and GBW. The obtained results show that the forksheet can be used for analog circuits such as OTA, for application in mixed-signal integrated circuits using this technology.

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叉片晶体管在运算跨导放大器中的应用

这项工作首次展示了用于操作跨导放大器（OTA）设计的叉片晶体管的实验数据，突出了它们在模拟电路中的应用潜力。OTA设计用于三种不同的晶体管效率：gm/ID为5、8和11 V−1。本实验采用的n型叉片，片厚HFS = 7 nm，片宽WFS = 23 nm，晶体管通道长度LG = 70 nm。当gm/ID从5 V−1增加到11 V−1时，漏极电流和跨导减小，使OTA电压增益（Av∝gm/ID）从49 dB提高到63 dB，总功耗（power∝ID）也从528 μW提高（降低）到129 μW，增益带宽积（GBW）从343 MHz降低到196 MHz （GBW∝gm）。根据不同的应用，由于Av和GBW之间的权衡，必须适当设置OTA偏置条件。结果表明，该叉片可用于OTA等模拟电路，可应用于混合信号集成电路中。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.