A 10T2R non-volatile SRAM cell design with high-reliability

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2026-04-01 Epub Date: 2025-12-05 DOI:10.1016/j.sse.2025.109304

So-Yeon Kwon, Woon-San Ko, Jun-Ho Byun, Do-Yeon Lee, So-Yeong Park, Hye-Ri Hong, Ga-Won Lee

引用次数: 0

Abstract

In this study, a highly reliable 10T2R non-volatile SRAM (nvSRAM) cell is proposed. The previous nvSRAM structures face reliability issues of Resistive Random-Access Memory (RRAM) due to unwanted stress-induced data nodes. To overcome this challenge, the proposed 10T2R nvSRAM design integrates two transistors that effectively isolate both ends of the RRAM, acting as voltage blockers and current controllers. The SPICE simulation results show that the voltage stress applied to the RRAM during the Read/Write operation is less than 1 mV. Regarding the static noise margin (SNM), the SNM value of the 10T2R in each operation is similar to that of a 6T SRAM. Additionally, it successfully performs the RESTORE operation after power-on and demonstrates low power consumption. This highlights the potential of the proposed 10T2R cell to advance non-volatile memory technology.

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一种高可靠性的10T2R非易失性SRAM单元设计

在这项研究中，提出了一个高可靠的10T2R非易失性SRAM （nvSRAM）单元。以前的nvSRAM结构由于不需要应力引起的数据节点而面临电阻随机存取存储器（RRAM）的可靠性问题。为了克服这一挑战，提出的10T2R nvSRAM设计集成了两个晶体管，有效地隔离了RRAM的两端，作为电压阻滞器和电流控制器。SPICE仿真结果表明，读写过程中施加在RRAM上的电压应力小于1 mV。关于静态噪声裕度（SNM）， 10T2R在每次操作中的SNM值与6T SRAM相似。开机后能成功执行RESTORE操作，功耗低。这突出了所提出的10T2R电池在推进非易失性存储技术方面的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.