Effect of PN passivation on MOSFETs performance in 28 nm FD-SOI

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2026-01-01 Epub Date: 2025-11-15 DOI:10.1016/j.sse.2025.109293

M. Vanbrabant , M. Rack , A. Cathelin , J.-P. Raskin , V. Kilchytska

引用次数: 0

Abstract

This work investigates, for the first time, how the PN passivation introduced in the fully depleted silicon-on-insulator (FD-SOI) substrate below the buried oxide (BOX) to improve substrate performance for RF applications in 28 nm FD-SOI technology affects active MOSFET parameters. DC performance and low-frequency noise (LFN) of MOSFETs are studied for different substrate resistivities and implant parameters. It is demonstrated that PN passivation impacts the device performance via modification of the back-gate realization.

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PN钝化对28 nm FD-SOI中mosfet性能的影响

这项工作首次研究了在埋设氧化物（BOX）下方的完全耗尽绝缘体上硅（FD-SOI）衬底中引入PN钝化以提高28nm FD-SOI技术射频应用中的衬底性能如何影响有源MOSFET参数。研究了不同衬底电阻率和植入物参数下mosfet的直流性能和低频噪声。通过修改后门实现，证明PN钝化对器件性能的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.