A mathematical model for non-equilibrium body potential of SOI Pseudo-MOS and physical mechanism analysis

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2026-01-01 Epub Date: 2025-11-07 DOI:10.1016/j.sse.2025.109287

Tiexin Zhang , Fanyu Liu , Lei Shu , Bo Li , Zhengsheng Han , Tianchun Ye

引用次数: 0

Abstract

Based on SOI Pseudo-MOS, an equivalent circuit model of non-equilibrium body potential (V_neq) is proposed. The non-equilibrium majority carriers cannot be neglected to interpret the mechanism of V_neq. An accurate mathematical V_neq is determined through bringing non-equilibrium majority carriers into the discrete Poisson equation, which is validated by TCAD simulations.

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SOI伪mos非平衡体势的数学模型及物理机理分析

基于SOI伪mos，提出了非平衡体电位（Vneq）的等效电路模型。非平衡多数载流子是解释Vneq机理的重要因素。通过在离散泊松方程中引入非平衡多数载流子，确定了精确的数学Vneq，并通过TCAD仿真进行了验证。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.