A 200 GHz Wideband and Low-Power Direct-Downconversion Receiver Element in 16 nm FinFET Technology

Abstract

This letter presents a wideband and low-power direct-downconversion 200 GHz receiver element for digital-beamforming applications implemented in 16 nm FinFET technology. Wideband and low integrated receiver noise figure of 9.8 dB across a 21 GHz baseband bandwidth is realized with a differential low-noise amplifier leveraging an active input balun stage, while wideband gain of 29 dB with a 3-dB bandwidth at RF of 42 GHz is maintained throughout the receiver chain. Low-loss I/Q splitting and current-efficient variable-gain baseband amplification enable relatively low total DC power consumption of 130 mW, including the LO chain. The high instantaneous bandwidth and low power consumption enable potentially high data rates with high energy efficiency.