Directional Spin Transport in Zigzag GeC Nanoribbons via Edge Engineering: A DFT-NEGF Perspective

IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Varun Sharma;Neha Bhardwaj;Pankaj Srivastava;Banti Yadav
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引用次数: 0

Abstract

Density functional theory (DFT) and non-equilibrium Green’s function (NEGF) formalism have been employed to investigate the prospects of zigzag germanium carbide nanoribbons (ZGeCNR) for spin filtering applications. We have considered total four possible configurations; firstly, symmetric edge-terminated configurations (H-ZGeCNR-H, 2H-ZGeCNR-2H) and secondly, asymmetric edge-terminated configurations (2H-ZGeCNR-H, H-ZGeCNR-2H). Based on energy calculation, we have predicted that 2H-GeCNR-H exhibits magnetic ground state with preferred ferromagnetic (FM) coupling $\Delta$E = 0.137 meV. Calculated spin-polarized $E-k$ diagram and DOS profile calculation for 2H-GeCNR-H configuration implies a unique semi-metallic character for spin-down, whereas spin-up posses a wide bandgap of 2.33eV. This interesting half-metallic (HM) behaviour of compounded group-IV nanomaterials (such as SiC, GeC) are different from group-IV elemental counterparts such as (silicene, germanene), which exhibit bipolar magnetic semiconducting behaviour upon asymmetric termination. To demonstrate the behaviour of 2H-GeCNR-H as a spin-filter, $I-V$ calculations using two probe device model was performed with both parallel (P-case) and antiparallel (AP-case) spin orientation of the electrodes. The recorded values of $I-V$, transmission spectra clearly highlight the presence of only spin-down current in the channel for both P and AP cases, indicating almost 100% spin filtering efficiency. These results warrant 2H-ZGeCNR-H applicability for high-efficiency spin filters.
基于边缘工程的z形GeC纳米带的定向自旋输运:DFT-NEGF视角
采用密度泛函理论(DFT)和非平衡格林函数(NEGF)形式分析了锯齿形碳化锗纳米带(ZGeCNR)自旋过滤的应用前景。我们总共考虑了四种可能的配置;第一种是对称端边构型(H-ZGeCNR-H、2H-ZGeCNR-2H),第二种是不对称端边构型(2H-ZGeCNR-H、H-ZGeCNR-2H)。基于能量计算,我们预测了2H-GeCNR-H具有优先铁磁耦合的磁性基态$\Delta$E = 0.137 meV。2H-GeCNR-H结构的自旋极化$E-k$图和DOS曲线计算表明,自旋向下具有独特的半金属性质,而自旋向上具有2.33eV的宽带隙。复合第四族纳米材料(如SiC, GeC)的这种有趣的半金属(HM)行为与第四族元素对应物(如硅烯,锗烯)不同,后者在不对称终止时表现出双极磁性半导体行为。为了证明2H-GeCNR-H作为自旋滤波器的行为,使用双探针器件模型对电极的平行(p -情况)和反平行(ap -情况)自旋方向进行了$I-V$计算。在P和AP两种情况下,透射光谱的记录值清楚地表明通道中只存在自旋向下电流,表明自旋滤波效率几乎为100%。这些结果证明2H-ZGeCNR-H适用于高效自旋过滤器。
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来源期刊
IEEE Transactions on Nanotechnology
IEEE Transactions on Nanotechnology 工程技术-材料科学:综合
CiteScore
4.80
自引率
8.30%
发文量
74
审稿时长
8.3 months
期刊介绍: The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.
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