Traps and radio-frequency characterization of polysilicon layer on high resistivity silicon substrate

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2026-01-01 Epub Date: 2025-10-25 DOI:10.1016/j.sse.2025.109269

Eric Vandermolen , Philippe Ferrandis , Frédéric Allibert , Emmanuel Augendre , Massinissa Nabet , Martin Rack , Jean-Pierre Raskin , Mikaël Cassé

引用次数: 0

Abstract

In this work, radio-frequency and traps properties of unintentionally doped polycrystalline silicon (polySi) deposited by low pressure chemical vapor deposition (LPCVD) on high resistivity silicon (HR-Si) substrate are characterized. Both volume (i.e. inside polySi) and interface traps (i.e. near polySi/HR-Si) are detected by photo-induced current transient spectroscopy (PICTS). A thermal budget of 900 °C during 2 h is sufficient to observe trap densities reduction near the polySi/HR-Si interface, affecting the RF performance of the fabricated substrates.

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高电阻率硅衬底上多晶硅层的陷阱和射频特性

在这项工作中，通过低压化学气相沉积（LPCVD）在高电阻率硅（r - si）衬底上沉积无意掺杂多晶硅（polySi）的射频和陷阱特性进行了表征。通过光致电流瞬态光谱（PICTS）检测体积（即多晶硅内部）和界面陷阱（即多晶硅/HR-Si附近）。900°C的热收支在2小时内足以观察到聚硅/HR-Si界面附近的陷阱密度降低，影响了制备基板的射频性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.