3D simulation of charge defect impact on an industrial 28 nm FD-SOI quantum dot

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2026-01-01 Epub Date: 2025-10-29 DOI:10.1016/j.sse.2025.109285

Benjamin Bureau , Félix Beaudoin , Pericles Philippopoulos , Salvador Mir , Eva Dupont-Ferrier , Philippe Galy

引用次数: 0

Abstract

The emergence of cryo-electronics and quantum applications has shown that experiments involving quantum dots are highly sensitive to disorder and variability. This sensitivity offers the opportunity to detect and classify defects, evaluate process quality in detail, and guide the enhancement of robustness. In this preliminary work, we explore the 3D quantum simulation of an industrial FD-SOI quantum dot device, with and without a charge defect.

查看原文本刊更多论文

工业28 nm FD-SOI量子点上电荷缺陷影响的三维模拟

低温电子学和量子应用的出现表明，涉及量子点的实验对无序和可变性高度敏感。这种灵敏度提供了检测和分类缺陷的机会，详细评估过程质量，并指导鲁棒性的增强。在这项初步工作中，我们探索了工业FD-SOI量子点器件的三维量子模拟，有和没有电荷缺陷。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.