{"title":"A SPICE-Compatible Compact Model of Ferroelectric Diode","authors":"Musaib Rafiq;Mohammad Sajid Nazir;Ateeb Naseer;Yogesh Singh Chauhan;Shubham Sahay","doi":"10.1109/JXCDC.2025.3624212","DOIUrl":null,"url":null,"abstract":"In this work, for the first time, we present a SPICE-compatible compact model of ferroelectric (FE) diodes to enable their design exploration for diverse applications, including memory and unconventional computing paradigms. We propose modified Schottky barrier and hopping models for capturing the on- and off-mode operations of the FE diode, respectively, in conjunction with the multidomain Preisach model for incorporating the FE switching. Since the operating regime of the FE diode is determined by the polarization state and the sign of the applied voltage, directional dependence is also introduced in the proposed model to effectively capture the experimentally observed current–voltage characteristics. The proposed FE-diode model is validated by accurately reproducing two sets of asymmetric experimental current–voltage characteristics of BE/HZO/IGZO/TE FE diodes.","PeriodicalId":54149,"journal":{"name":"IEEE Journal on Exploratory Solid-State Computational Devices and Circuits","volume":"11 ","pages":"166-170"},"PeriodicalIF":3.1000,"publicationDate":"2025-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11214353","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal on Exploratory Solid-State Computational Devices and Circuits","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/11214353/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, for the first time, we present a SPICE-compatible compact model of ferroelectric (FE) diodes to enable their design exploration for diverse applications, including memory and unconventional computing paradigms. We propose modified Schottky barrier and hopping models for capturing the on- and off-mode operations of the FE diode, respectively, in conjunction with the multidomain Preisach model for incorporating the FE switching. Since the operating regime of the FE diode is determined by the polarization state and the sign of the applied voltage, directional dependence is also introduced in the proposed model to effectively capture the experimentally observed current–voltage characteristics. The proposed FE-diode model is validated by accurately reproducing two sets of asymmetric experimental current–voltage characteristics of BE/HZO/IGZO/TE FE diodes.