A SPICE-Compatible Compact Model of Ferroelectric Diode

IF 3.1 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE
Musaib Rafiq;Mohammad Sajid Nazir;Ateeb Naseer;Yogesh Singh Chauhan;Shubham Sahay
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引用次数: 0

Abstract

In this work, for the first time, we present a SPICE-compatible compact model of ferroelectric (FE) diodes to enable their design exploration for diverse applications, including memory and unconventional computing paradigms. We propose modified Schottky barrier and hopping models for capturing the on- and off-mode operations of the FE diode, respectively, in conjunction with the multidomain Preisach model for incorporating the FE switching. Since the operating regime of the FE diode is determined by the polarization state and the sign of the applied voltage, directional dependence is also introduced in the proposed model to effectively capture the experimentally observed current–voltage characteristics. The proposed FE-diode model is validated by accurately reproducing two sets of asymmetric experimental current–voltage characteristics of BE/HZO/IGZO/TE FE diodes.
兼容spice的铁电二极管紧凑模型
在这项工作中,我们首次提出了一种spice兼容的铁电(FE)二极管紧凑模型,以使其设计探索适用于各种应用,包括存储器和非常规计算范例。我们提出了改进的肖特基势垒和跳变模型,分别用于捕获FE二极管的导通和关断模式操作,并结合多域Preisach模型用于合并FE开关。由于FE二极管的工作状态是由极化状态和外加电压的符号决定的,因此在所提出的模型中还引入了方向依赖,以有效地捕获实验观察到的电流-电压特性。通过精确再现BE/HZO/IGZO/TE FE二极管的两组不对称实验电流电压特性,验证了所提出的FE二极管模型。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
5.00
自引率
4.20%
发文量
11
审稿时长
13 weeks
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