Power-Balanced Memristive Cryptographic Implementation Against Side Channel Attacks

IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Ziang Chen;Li-Wei Chen;Xianyue Zhao;Kefeng Li;Heidemarie Krüger;Ilia Polian;Nan Du
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Abstract

Memristors, as emerging nano-devices, offer promising performance and exhibit rich electrical dynamic behavior. Having already found success in applications such as neuromorphic and in-memory computing, researchers are now exploring their potential for cryptographic implementations. In this study, we present a novel power-balanced hiding strategy utilizing memristor groups to conceal power consumption in cryptographic logic circuits. Our approach ensures consistent power costs of all 16 logic gates in Complementary-Resistive-Switching-with-Reading (CRS-R) logic family during writing and reading cycles regardless of Logic Input Variable (LIV) values. By constructing hiding groups, we enable an effective power balance in each gate hiding group. Furthermore, experimental validation of our strategy includes the implementation of a cryptographic construction, xor4SBox, using hiding groups containing NOR gates. The circuit construction without the hiding strategy and with the hiding strategy undergo Test Vector Leakage Assessment (TVLA) based on T-test, confirming the significant improvement achieved with our approach. To address the extensive data requirements necessitated by the T-test, simulated power traces are employed. Our work presents a substantial advancement in power-balanced hiding methods, offering enhanced security and efficiency in logic circuits.
对抗侧信道攻击的功率平衡记忆密码实现
忆阻器作为新兴的纳米器件,具有良好的性能和丰富的电动态特性。研究人员已经在神经形态和内存计算等应用中取得了成功,现在他们正在探索加密实现的潜力。在这项研究中,我们提出了一种新的功率平衡隐藏策略,利用忆阻器组来隐藏密码逻辑电路中的功耗。我们的方法确保在写入和读取周期中,无论逻辑输入变量(LIV)值如何,互补电阻式读开关(CRS-R)逻辑家族中的所有16个逻辑门的功耗都是一致的。通过构建隐藏组,我们实现了每个门隐藏组的有效功率平衡。此外,我们的策略的实验验证包括使用包含NOR门的隐藏组实现加密结构xor4SBox。对不采用隐藏策略和采用隐藏策略的电路结构进行了基于t检验的测试向量泄漏评估(TVLA),验证了我们的方法取得的显著改进。为了满足t检验所需的大量数据需求,采用了模拟电源走线。我们的工作在功率平衡隐藏方法方面取得了实质性进展,提高了逻辑电路的安全性和效率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Transactions on Nanotechnology
IEEE Transactions on Nanotechnology 工程技术-材料科学:综合
CiteScore
4.80
自引率
8.30%
发文量
74
审稿时长
8.3 months
期刊介绍: The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.
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