Dual-Junction Monolithically Integrated Monitoring Photodiode With a Two-Stage 18 GHz 18 pA/√Hz TIA in 22-nm FDSOI

IF 2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE

IEEE Solid-State Circuits Letters Pub Date : 2025-09-29 DOI:10.1109/LSSC.2025.3615656

Jelle H. T. Bakker;Nimit Jain;Paul Klatser;Mark S. Oude Alink;Bram Nauta

引用次数: 0

Abstract

We present a monolithically integrated (MI) dualjunction monitoring photodiode (PD) and transimpedance amplifier (TIA). The photocurrent originates from the deep Nwell (DNW)/P-type substrate (PSUB)

$({\lt }5~ \mathrm {GHz})$

and the P-Well

$(\mathrm {PW}) / \mathrm {DNW}({\gt }1~ \mathrm {GHz})$

junctions. The presented combination of bulk PD and 22 nm fully-depleted silicon-on-insulator (FDSOI) TIA (18-GHz bandwidth (BW),

$17.8 ~\mathrm {pA} / \sqrt {\mathrm {Hz}}$

noise level) advances the state-of-the-art in MI high-speed optical monitoring and reduces the inherent tradeoff in MI solutions regarding PD (responsivity & BW) and RF circuitry

$(f_{t})$

performance.

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采用两级18ghz 18pa /√Hz TIA的22nm FDSOI双结单片集成监测光电二极管

我们提出了一种单片集成（MI）双结监测光电二极管（PD）和跨阻放大器（TIA）。光电流来源于深Nwell (DNW)/ p型衬底（PSUB） $({\lt}5~ \mathrm {GHz})$和P-Well $(\mathrm {PW}) / \mathrm {DNW}({\gt}1~ \mathrm {GHz})$结。所提出的体PD和22 nm完全耗尽绝缘体上硅（FDSOI） TIA （18 ghz带宽（BW）， 17.8 ~\ mathm {pA} / \sqrt {\ mathm {Hz}}$噪声级）的组合，推进了MI高速光学监测的最新技术，并减少了MI解决方案中PD（响应性和BW）和RF电路（f_{t}）$性能的固有权衡。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering

CiteScore

4.30

自引率

3.70%

发文量