A RISC-V SoC With Reconfigurable Custom Instructions on a Synthesized eFPGA Fabric in 22nm FinFET

IF 2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE
Prashanth Mohan;Siddharth Das;Ken Mai
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引用次数: 0

Abstract

This letter presents a flexible and energy-efficient RISC-V system-on-chip (SoC) in 22nm FinFET technology, achieving state-of-the-art performance by tightly integrating the CPU with a synthesized embedded FPGA (embedded field programmable gate array (eFPGA)), enabling the implementation of reconfigurable custom instructions. The tight integration of the eFPGA with SoC scratchpad memory facilitates parallel high-bandwidth (16 GB/s) access to scratchpad SRAMs and enables rapid eFPGA reconfiguration ( $2~\mu $ s) to switch between custom instruction sets. The eFPGA fabric itself is optimized for compute-intensive tasks, featuring fused logic tiles that amortize routing overheads to achieve a compute density of 22.3 GOPS/mm2. The measurement results from the fabricated chip demonstrate a peak energy efficiency of 748 GOPS/W (INT8) while improving throughput and energy by 1-2 orders of magnitude compared to the CPU for accelerated applications.
在22nm FinFET合成eFPGA结构上具有可重构自定义指令的RISC-V SoC
本文介绍了一种灵活节能的RISC-V片上系统(SoC),采用22nm FinFET技术,通过将CPU与合成嵌入式FPGA(嵌入式现场可编程门阵列(eFPGA))紧密集成,实现了最先进的性能,实现了可重构定制指令的实现。eFPGA与SoC刮刮板存储器的紧密集成促进了对刮刮板sram的并行高带宽(16 GB/s)访问,并实现了快速eFPGA重新配置($2~\mu $ s)以在自定义指令集之间切换。eFPGA结构本身针对计算密集型任务进行了优化,具有融合的逻辑块,可分摊路由开销,实现22.3 GOPS/mm2的计算密度。制造芯片的测量结果表明,峰值能量效率为748 GOPS/W (INT8),同时与加速应用的CPU相比,吞吐量和能量提高了1-2个数量级。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Solid-State Circuits Letters
IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering
CiteScore
4.30
自引率
3.70%
发文量
52
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