Mengyu Gao, Hanyu Hong, Sicheng Fan, Tomojit Chowdhury, Zehra Naqvi, Jingyuan Ge, Ce Liang, Yu Han, Nathan P. Guisinger, Yuqing Qiu, Dong Hyup Kim, Suriyanarayanan Vaikuntanathan, Chong Liu, Jiwoong Park
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引用次数: 0
Abstract
Controlling the localization of mobile charges in solids enables the discovery of correlated physical phenomena, but applying it for the development of next-generation electronics requires achieving such control under practical conditions. In this study, we report room-temperature, switchable charge localization in high-quality bilayer transistors that comprise a monolayer of molecular crystal on top of a monolayer semiconductor. By using an ion gate, we selectively populated either localized molecular states or semiconductor band states, achieving complete localization from mobile charges at densities up to 3 × 1013 per square centimeter. This transition was energetically stabilized by the formation of coupled electron-ion dipoles, which could be tuned through Coulomb engineering. These properties further enabled single-band ambipolar transistor operation without substitutional dopants, demonstrating the potential of electron-ion correlations for practical electronic applications.
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