Robust epitaxy of single-crystal transition-metal dichalcogenides on lanthanum-passivated sapphire

IF 45.8 1区综合性期刊 Q1 MULTIDISCIPLINARY SCIENCES

Science Pub Date : 2025-10-23 DOI:10.1126/science.aea0849

Xilu Zou, Yuanyuan Zhao, Dongxu Fan, Shengqiang Wu, Yushu Wang, Caiqi Zou, Yuliang Bian, Lei Liu, Lang Wu, Zhoushuo Han, Wenjie Sun, Yuefeng Nie, Junfeng Gao, Shitong Zhu, Yi Shi, Taotao Li, Feng Ding, Xinran Wang

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Abstract

Two-dimensional (2D) transition-metal dichalcogenide (TMDC) semiconductors are promising materials for beyond-silicon electronics, but the growth of single-crystalline TMDCs has been limited to small wafer sizes in laboratory settings. We report the epitaxy of 150-millimeter single-crystalline TMDC wafers on lanthanum-passivated c-plane sapphire. The single atomic layer of lanthanum reduces the surface symmetry and increases the energy difference between antiparallel domains by as much as 200 times, leading to unidirectional domain alignment. We grew single-crystalline molybdenum disulfide (MoS₂), molybdenum diselenide (MoSe₂), tungsten disulfide (WS₂), and tungsten diselenide (WSe₂) by means of both chemical vapor deposition (CVD) and metal-organic CVD processes. Wafer-scale spectroscopies and device measurements demonstrate the exceptional quality and uniformity of 150-millimeter TMDCs, with average mobility of 110 and 131 square centimeters per volt per second for MoS₂ and WSe₂, respectively, at room temperature.

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镧钝化蓝宝石上过渡金属二硫化物单晶的稳健性外延

二维（2D）过渡金属二硫化物（TMDC）半导体是一种很有前途的超硅电子材料，但单晶TMDC的生长仅限于实验室环境中的小晶圆尺寸。我们报道了150毫米单晶TMDC晶片在镧钝化c平面蓝宝石上的外延。镧的单原子层降低了表面对称性，并使反平行畴之间的能量差增加了200倍，导致单向畴对齐。采用化学气相沉积（CVD）和金属有机CVD工艺制备了单晶二硫化钼（MoS 2）、二硒化钼（MoSe 2）、二硫化钨（WS 2）和二硒化钨（WSe 2）。晶圆级光谱和器件测量证明了150毫米TMDCs的卓越质量和均匀性，在室温下，MoS 2和WSe 2的平均迁移率分别为110和131平方厘米/伏/秒。

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来源期刊

Science 综合性期刊-综合性期刊

CiteScore

61.10

自引率

0.90%

发文量

审稿时长

2.1 months

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