Controllable tuning of reversible thermally induced phase transition and adaptive infrared emissivity in microcrystalline VO2 thin films via argon ion implantation

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films Pub Date : 2025-10-10 DOI:10.1016/j.tsf.2025.140810

Andrii Nikolenko, Oleksandr Kolomys, Viktor Strelchuk, Petro Lytvyn, Denys Maziar, Maksym Alieksandrov, Borys Romanyuk, Oleksandr Dubikovskyi, Zinoviia Tsybrii, Yevhen Melezhyk, Viacheslav Zabudsky, Nataliia Kukhtaruk

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引用次数: 0

Abstract

The effects of argon ion (Ar⁺) implantation on the dynamics of infrared (IR) thermal emissivity and optical properties of microcrystalline vanadium dioxide (VO₂) thin films were investigated during the metal-insulator transition (MIT) using infrared thermography and Fourier-transform infrared (FTIR) spectroscopy. Thin films deposited on Si(100) substrates were Ar⁺-implanted at 180 keV with doses between 2.15 × 10¹⁵ and 5.36 × 10¹⁵ ions/cm². Temperature-dependent emissivity was examined in the mid- and long-wave infrared spectral ranges during heating-cooling cycles, with emphasis on hysteretic behavior associated with the VO₂(M1) ↔ VO₂(R) phase transition. Comparative analysis of pristine and implanted VO₂ films revealed a dose-dependent reduction of the transition temperature from 340 K in the pristine film to 321 K and 315 K, an increase in metallic-phase emissivity from 0.30 to 0.34 and 0.46 at the two implantation levels, and a broadening of the emissivity hysteresis loop from ∼7 K in the initial sample to ∼9 K in the implanted films. Moreover, the amplitude of the emissivity change across the phase transition decreased substantially, from 0.21 in the pristine film to 0.08 in the film implanted with the highest dose. These effects are discussed in relation to implantation-induced structural disorder, including enhanced defect density and strain relaxation, which modify the coexistence of metallic and insulating domains. The results highlight ion implantation as an effective approach for tailoring the emissive response of VO₂ thin films for adaptive infrared devices and thermal management applications.

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通过氩离子注入实现VO2微晶薄膜可逆热致相变和自适应红外发射率的可控调谐

采用红外热像仪和傅里叶变换红外光谱技术研究了氩离子（Ar +）注入对金属-绝缘体跃迁（MIT）过程中微晶二氧化钒（VO2）薄膜红外（IR）热发射率和光学性能的影响。在180 keV下以2.15 × 1015 ~ 5.36 × 1015离子/cm2注入Ar+，在Si（100）衬底上沉积薄膜。在加热-冷却循环过程中，研究了中波和长波红外光谱范围内的温度相关发射率，重点研究了与VO2（M1）↔VO2(R)相变相关的滞后行为。原始VO2薄膜和注入VO2薄膜的对比分析表明，原始VO2薄膜的转变温度从340 K降低到321 K和315 K，金属相发射率从0.30增加到0.34和0.46，在两个注入水平上，发射率滞后环从初始样品的~ 7 K扩大到注入膜的~ 9 K。此外，发射率在相变中的变化幅度显著减小，从原始膜的0.21降至最高剂量注入膜的0.08。这些影响与注入引起的结构紊乱有关，包括缺陷密度和应变松弛的增强，它们改变了金属和绝缘畴的共存。结果表明，离子注入是一种有效的方法，可以定制自适应红外器件和热管理应用中VO2薄膜的发射响应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Thin Solid Films 工程技术-材料科学：膜

CiteScore

4.00

自引率

4.80%

发文量

381

审稿时长

7.5 months

期刊介绍： Thin Solid Films is an international journal which serves scientists and engineers working in the fields of thin-film synthesis, characterization, and applications. The field of thin films, which can be defined as the confluence of materials science, surface science, and applied physics, has become an identifiable unified discipline of scientific endeavor.