Construction of ZnIn2S4-Au-CdS heterostructure for boosting photothermal-assisted photocatalytic hydrogen production

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-10-12 DOI:10.1016/j.mssp.2025.110138

Xiaohua Zhao , Xiaoxiao Liu , Xiang Liu , Xueping Zhang , Shuang Wang , Shiyi Yang , Xing Chen

{"title":"Construction of ZnIn2S4-Au-CdS heterostructure for boosting photothermal-assisted photocatalytic hydrogen production","authors":"Xiaohua Zhao , Xiaoxiao Liu , Xiang Liu , Xueping Zhang , Shuang Wang , Shiyi Yang , Xing Chen","doi":"10.1016/j.mssp.2025.110138","DOIUrl":null,"url":null,"abstract":"<div><div>Photocatalytic hydrogen (H2) evolution via water splitting offers an environmentally friendly and sustainable approach for converting solar energy into clean fuel. In this study, we constructed an efficient ternary ZnIn2S4-Au-CdS (ZIS-Au-CdS) photocatalyst by decorating flower-like ZIS microspheres with Au nanoparticles (NPs) and CdS, significantly enhancing visible-light absorption and utilization. The optimized ZIS-Au-CdS composite achieves remarkable H2 evolution rates of 8.02 mmol g−1 h−1 under visible light and 11.90 mmol g−1 h−1 under full-spectrum irradiation, representing 11.47- and 7.93-fold enhancements over pure ZIS under the same conditions. The well-matched band structures of ZIS and CdS facilitate the establishment of an internal electric field (IEF) at the heterojunction interfaces, which not only broadens the visible-light absorption range but also significantly promotes the separation of photogenerated charge carriers. In addition, Au NPs function as effective electron mediators at the interface, accelerating charge transfer between ZIS and CdS and further suppressing charge recombination. The photothermal effect from Au NPs also raises the local reaction temperature, contributing to photothermal-assisted photocatalytic H2 evolution. As a result, the ZIS-Au-CdS photocatalyst demonstrates superior photocatalytic H2 evolution performance under both visible and full-spectrum irradiation.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110138"},"PeriodicalIF":4.6000,"publicationDate":"2025-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125008765","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

Photocatalytic hydrogen (H₂) evolution via water splitting offers an environmentally friendly and sustainable approach for converting solar energy into clean fuel. In this study, we constructed an efficient ternary ZnIn₂S₄-Au-CdS (ZIS-Au-CdS) photocatalyst by decorating flower-like ZIS microspheres with Au nanoparticles (NPs) and CdS, significantly enhancing visible-light absorption and utilization. The optimized ZIS-Au-CdS composite achieves remarkable H₂ evolution rates of 8.02 mmol g⁻¹ h⁻¹ under visible light and 11.90 mmol g⁻¹ h⁻¹ under full-spectrum irradiation, representing 11.47- and 7.93-fold enhancements over pure ZIS under the same conditions. The well-matched band structures of ZIS and CdS facilitate the establishment of an internal electric field (IEF) at the heterojunction interfaces, which not only broadens the visible-light absorption range but also significantly promotes the separation of photogenerated charge carriers. In addition, Au NPs function as effective electron mediators at the interface, accelerating charge transfer between ZIS and CdS and further suppressing charge recombination. The photothermal effect from Au NPs also raises the local reaction temperature, contributing to photothermal-assisted photocatalytic H₂ evolution. As a result, the ZIS-Au-CdS photocatalyst demonstrates superior photocatalytic H₂ evolution performance under both visible and full-spectrum irradiation.

查看原文本刊更多论文

ZnIn2S4-Au-CdS异质结构的构建促进光热辅助光催化制氢

通过水分解光催化氢（H2）演化为将太阳能转化为清洁燃料提供了一种环保和可持续的方法。在本研究中，我们用Au纳米粒子（NPs）和CdS装饰花状ZIS微球，构建了高效的ZnIn2S4-Au-CdS三元光催化剂（ZIS-Au-CdS），显著提高了可见光的吸收和利用。优化后的ZIS- au - cds复合材料在可见光和全光谱下的H2析出速率分别为8.02 mmol g−1 h−1和11.90 mmol g−1 h−1，分别是相同条件下纯ZIS的11.47倍和7.93倍。ZIS和CdS良好匹配的能带结构有助于在异质结界面处建立内部电场（IEF），不仅拓宽了可见光吸收范围，而且显著促进了光生载流子的分离。此外，Au NPs在界面处作为有效的电子介质，加速ZIS和CdS之间的电荷转移，并进一步抑制电荷复合。Au NPs的光热效应也提高了局部反应温度，有助于光热辅助光催化析氢。结果表明，ZIS-Au-CdS光催化剂在可见光和全光谱下均表现出优异的光催化析氢性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.