G. Kausalya Sasikumar , A. Anitha , M. Sivanandam , P. Ponmurugan , R.R. Shenthilkumar
{"title":"Phosphorus doped 2D polymeric graphitic carbon nitride biomaterial: Biological activity and DFT insights with nitrofuran drug interactions","authors":"G. Kausalya Sasikumar , A. Anitha , M. Sivanandam , P. Ponmurugan , R.R. Shenthilkumar","doi":"10.1016/j.mssp.2025.110117","DOIUrl":null,"url":null,"abstract":"<div><div>Heteroatom-doped graphitic carbon nitride (P-g-CN) has gained immense attention owing to its superior electronic and structural properties which make it suitable for biological applications. In this study, we developed phosphorous-doped graphitic carbon nitride (P-g-CN NBs) using facile thermal polymerization techniques and utilized them for potential biological activity and Density Functional Theory (DFT) studies. The as-synthesized materials were characterized and tested for their anticancer, anti-inflammatory, and antioxidant activities. The anti-cancer activity of P-g-CN NBs exhibited lower cytotoxicity and higher cell viability than undoped g-CN in HeLa cells using the MTT assay. Anti-inflammatory activity was assessed in protein denaturation inhibition studies of Bovine Serum Albumin (BSA), whereas antioxidant activity was assessed using DPPH, ABTS, Superoxide (SO), and phosphomolybdenum (PM) assays. The P-g-CN NBs exhibited excellent radical scavenging activity in DHPH and low IC<sub>50</sub> (minimum inhibitory concentration) values (56 ± 0.45 μg/mL) when compared to the IC<sub>50</sub> values of g-CN (60 ± 0.12 μg/mL). SO radical scavenging activity revealed that P-g-CN NBs exhibited superior efficiency with an IC<sub>50</sub> of 51 ± 0.14 μg/mL, compared to g-CN (IC<sub>50</sub>: 60 ± 0.34 μg/mL), and was nearly equivalent to that of reference compound ascorbic acid (IC<sub>50</sub>: 49 ± 0.22 μg/mL). In addition, DFT studies were conducted to understand the interactions between P-g-CN NBs and nitrofuran at the molecular level. We modelled their binding interactions with four nitrofuran compounds: Furaltadone (FTD), Furazolidone (FZD), Nitrofurantoin (NFT), and Nitrofurazone (NFZ). These findings suggest that P-g-CN NBs is safe and effective in biological and environmental applications. This study combined experimental and computational studies to highlight the versatility of P-g-CN NBs.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"202 ","pages":"Article 110117"},"PeriodicalIF":4.6000,"publicationDate":"2025-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125008558","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Heteroatom-doped graphitic carbon nitride (P-g-CN) has gained immense attention owing to its superior electronic and structural properties which make it suitable for biological applications. In this study, we developed phosphorous-doped graphitic carbon nitride (P-g-CN NBs) using facile thermal polymerization techniques and utilized them for potential biological activity and Density Functional Theory (DFT) studies. The as-synthesized materials were characterized and tested for their anticancer, anti-inflammatory, and antioxidant activities. The anti-cancer activity of P-g-CN NBs exhibited lower cytotoxicity and higher cell viability than undoped g-CN in HeLa cells using the MTT assay. Anti-inflammatory activity was assessed in protein denaturation inhibition studies of Bovine Serum Albumin (BSA), whereas antioxidant activity was assessed using DPPH, ABTS, Superoxide (SO), and phosphomolybdenum (PM) assays. The P-g-CN NBs exhibited excellent radical scavenging activity in DHPH and low IC50 (minimum inhibitory concentration) values (56 ± 0.45 μg/mL) when compared to the IC50 values of g-CN (60 ± 0.12 μg/mL). SO radical scavenging activity revealed that P-g-CN NBs exhibited superior efficiency with an IC50 of 51 ± 0.14 μg/mL, compared to g-CN (IC50: 60 ± 0.34 μg/mL), and was nearly equivalent to that of reference compound ascorbic acid (IC50: 49 ± 0.22 μg/mL). In addition, DFT studies were conducted to understand the interactions between P-g-CN NBs and nitrofuran at the molecular level. We modelled their binding interactions with four nitrofuran compounds: Furaltadone (FTD), Furazolidone (FZD), Nitrofurantoin (NFT), and Nitrofurazone (NFZ). These findings suggest that P-g-CN NBs is safe and effective in biological and environmental applications. This study combined experimental and computational studies to highlight the versatility of P-g-CN NBs.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.