Phosphorus doped 2D polymeric graphitic carbon nitride biomaterial: Biological activity and DFT insights with nitrofuran drug interactions

IF 4.6 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
G. Kausalya Sasikumar , A. Anitha , M. Sivanandam , P. Ponmurugan , R.R. Shenthilkumar
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引用次数: 0

Abstract

Heteroatom-doped graphitic carbon nitride (P-g-CN) has gained immense attention owing to its superior electronic and structural properties which make it suitable for biological applications. In this study, we developed phosphorous-doped graphitic carbon nitride (P-g-CN NBs) using facile thermal polymerization techniques and utilized them for potential biological activity and Density Functional Theory (DFT) studies. The as-synthesized materials were characterized and tested for their anticancer, anti-inflammatory, and antioxidant activities. The anti-cancer activity of P-g-CN NBs exhibited lower cytotoxicity and higher cell viability than undoped g-CN in HeLa cells using the MTT assay. Anti-inflammatory activity was assessed in protein denaturation inhibition studies of Bovine Serum Albumin (BSA), whereas antioxidant activity was assessed using DPPH, ABTS, Superoxide (SO), and phosphomolybdenum (PM) assays. The P-g-CN NBs exhibited excellent radical scavenging activity in DHPH and low IC50 (minimum inhibitory concentration) values (56 ± 0.45 μg/mL) when compared to the IC50 values of g-CN (60 ± 0.12 μg/mL). SO radical scavenging activity revealed that P-g-CN NBs exhibited superior efficiency with an IC50 of 51 ± 0.14 μg/mL, compared to g-CN (IC50: 60 ± 0.34 μg/mL), and was nearly equivalent to that of reference compound ascorbic acid (IC50: 49 ± 0.22 μg/mL). In addition, DFT studies were conducted to understand the interactions between P-g-CN NBs and nitrofuran at the molecular level. We modelled their binding interactions with four nitrofuran compounds: Furaltadone (FTD), Furazolidone (FZD), Nitrofurantoin (NFT), and Nitrofurazone (NFZ). These findings suggest that P-g-CN NBs is safe and effective in biological and environmental applications. This study combined experimental and computational studies to highlight the versatility of P-g-CN NBs.
磷掺杂二维聚合物石墨氮化碳生物材料:生物活性和与硝基呋喃药物相互作用的DFT见解
杂原子掺杂石墨氮化碳(P-g-CN)由于其优越的电子和结构特性而受到广泛关注,使其适合于生物应用。在这项研究中,我们利用易热聚合技术开发了磷掺杂的石墨氮化碳(P-g-CN NBs),并将其用于潜在的生物活性和密度泛函理论(DFT)研究。对合成的材料进行了表征,并对其抗肿瘤、抗炎和抗氧化活性进行了测试。MTT实验显示,与未掺杂的g-CN相比,P-g-CN NBs在HeLa细胞中具有更低的细胞毒性和更高的细胞活力。抗炎活性通过牛血清白蛋白(BSA)的蛋白变性抑制研究来评估,而抗氧化活性通过DPPH、ABTS、超氧化物(SO)和钼磷(PM)测定来评估。与g-CN的IC50值(60±0.12 μg/mL)相比,P-g-CN NBs对DHPH具有良好的自由基清除活性,IC50值(56±0.45 μg/mL)较低。P-g-CN NBs对SO自由基的清除率为51±0.14 μg/mL,高于g-CN (IC50为60±0.34 μg/mL),与对照化合物抗坏血酸(IC50为49±0.22 μg/mL)相当。此外,通过DFT研究了解了P-g-CN NBs与硝基呋喃在分子水平上的相互作用。我们模拟了它们与四种硝基呋喃化合物的结合作用:呋喃他酮(FTD)、呋喃唑酮(FZD)、呋喃妥英(NFT)和呋喃酮(NFZ)。这些结果表明,P-g-CN NBs在生物和环境方面的应用是安全有效的。本研究结合实验和计算研究,突出了P-g-CN nb的通用性。
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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