Pd/PdO-Decorated NiAl-LDHs-Derived NiO/Al2O3 nanosheets for high-temperature H2 detection

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-10-10 DOI:10.1016/j.mssp.2025.110130

Qinghua Dong , Junjun Sun , Huijun Li , Cong Qin , Yan Wang , Jianliang Cao

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引用次数: 0

Abstract

Developing hydrogen (H₂) sensors that combine high sensitivity with rapid response/recovery kinetics presents a notable challenge in ensuring the safe use of this clean energy carrier. To address this, Pd/PdO nanoparticles were decorated onto NiO/Al₂O₃ composites derived from NiAl layered double hydroxides (LDHs) via hydrothermal synthesis followed by calcination. Characterization revealed that the optimal 2.0 wt% Pd/PdO-NiO/Al₂O₃ sample showcases a high concentration of oxygen vacancies, a large specific surface area (149.73 m²/g), and abundant porosity. Gas sensing evaluation demonstrated that this material exhibits a significantly enhanced response (2.921) to 100 ppm H₂ at an operating temperature of 350 °C. Crucially, it achieves remarkably fast response and recovery times of 14 and 19 s, respectively. Furthermore, the sensor demonstrates excellent selectivity and long-term stability. This work presents a promising strategy based on Schottky junction engineering within LDH-derived composites for realizing ultrafast and sensitive H₂ detection.

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Pd/ do修饰nial - ldhs衍生NiO/Al2O3纳米片用于高温H2检测

开发高灵敏度和快速响应/恢复动力学相结合的氢（H2）传感器是确保这种清洁能源载体安全使用的一个显着挑战。为了解决这个问题，Pd/PdO纳米颗粒通过水热合成和煅烧的方法修饰在由NiAl层状双氢氧化物（LDHs）衍生的NiO/Al2O3复合材料上。表征表明，最佳的2.0 wt% Pd/PdO-NiO/Al2O3样品具有高浓度的氧空位、较大的比表面积（149.73 m2/g）和丰富的孔隙度。气敏评价表明，在350°C的工作温度下，该材料对100 ppm H2的响应显著增强（2.921）。最重要的是，它实现了非常快的响应和恢复时间分别为14和19秒。此外，该传感器具有良好的选择性和长期稳定性。这项工作提出了一个有前途的策略，基于肖特基结工程在ldh衍生的复合材料中实现超快速和灵敏的H2检测。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.