Recent Progress in Sub-10 Nm Nanofabrication for Scaling Down 2D Transistors (Adv. Electron. Mater. 16/2025)

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials Pub Date : 2025-10-05 DOI:10.1002/aelm.70103

Haichuan Li, Yongyu Wu, Dawei Gao, Kai Xu, Kun Ren, Dianyu Qi

引用次数: 0

Abstract

Two-Dimensional Transistors

This cover depicts a sub-10nm channel 2D-FET on a silicon wafer, reflecting wafer-scale nanofabrication of ultra-scaled 2D-FETs. It showcases precise nanolithography, uniform arrays, and CMOS-compatible technology. More information can be found in the Review Article by Dianyu Qi and co-workers (10.1002/aelm.202500306).

Abstract Image

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用于缩小二维晶体管尺寸的亚10nm纳米工艺研究进展[j]。板牙。16/2025)

二维晶体管本封面描绘了硅晶圆上的亚10nm通道2D-FET，反映了超尺度2D-FET的晶圆级纳米制造。它展示了精确的纳米光刻，均匀阵列和cmos兼容技术。更多信息可参见Dianyu Qi及其同事的综述文章（10.1002/aelm.202500306）。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.00

自引率

3.20%

发文量

433

期刊介绍： Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.