CsF additive enables the efficiency and stability promotion of carbon-based hole-transport-layer-free CsPbI2Br perovskite solar cells

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-09-30 DOI:10.1016/j.mssp.2025.110108

Di Chang , Zihan Wu , Zixian Wang , Jianlin Chen , Siyuan Zhang , Caiyu Pei , Chi Li , Siyuan Zhao , Jiaqing Wang , Yifei Shi , Jincheng Huang , Zhuoyin Peng , Jian Chen

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Abstract

The inorganic perovskite solar cells (PSCs) exhibit superior thermal stability to the organic-inorganic hybrid PSCs. However, halide defects with low formation energy are often present at grain boundaries of the inorganic perovskite films. This results in many defects of Pb²⁺ uncoordinated with halides, causing in non-radiative recombination in the films. In this work, cesium fluoride (CsF) was chosen as an additive in the CsPbI₂Br precursor solution, in which Cs⁺ can passivate the A-site vacancy defects in CsPbI₂Br perovskite films; fluoride ion (F⁻) has a smaller ionic radius and is more electronegative than chloride ion (Cl⁻), iodide ion (I⁻), and bromide ion (Br⁻), which may allow it to fit in the smaller spaces in the host lattice, as well as weaken the lattice strain and improve the stability of the desired phase. Based on this strategy, CsF-treated carbon-based hole-transport-layer-free CsPbI₂Br PSCs were obtained with a champion photovoltaic conversion efficiency of 13.45 %, short-circuit current density of 15.15 mA/cm², open-circuit voltage of 1.18 V, and fill factor of 75 %. Meanwhile, the CsF-treated CsPbI₂Br PSCs possessed better environmental stability compared to the un-treated counterpart due to the introduction of the more hydrophobic F⁻. This strategy provides a simple and feasible strategy for the development of efficient and stable inorganic PSCs.

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CsF添加剂能够提高碳基无空穴运输层CsPbI2Br钙钛矿太阳能电池的效率和稳定性

无机钙钛矿太阳能电池（PSCs）表现出比有机-无机杂化PSCs更好的热稳定性。然而，在无机钙钛矿薄膜的晶界处往往存在低形成能的卤化物缺陷。这导致了Pb2+的许多缺陷与卤化物不配合，导致薄膜中的非辐射复合。本研究选择氟化铯（CsF）作为CsPbI2Br前驱体溶液的添加剂，Cs+可以钝化CsPbI2Br钙钛矿薄膜中的a位空位缺陷；氟离子（F−）比氯离子（Cl−）、碘离子（I−）和溴离子（Br−）具有更小的离子半径和更强的电负性，这可能使其能够适应宿主晶格中较小的空间，并削弱晶格应变，提高所需相的稳定性。基于该策略，获得了经csf处理的碳基空穴输运无层CsPbI2Br PSCs，其光伏转换效率为13.45%，短路电流密度为15.15 mA/cm2，开路电压为1.18 V，填充系数为75%。同时，由于引入了更疏水的F−，与未处理的CsPbI2Br PSCs相比，csf处理的CsPbI2Br PSCs具有更好的环境稳定性。该策略为开发高效稳定的无机psc提供了一种简单可行的策略。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.