All‐Solution Processed OFETs from Non‐Chlorinated Solvents Based on New Isoindigo‐Based Conjugated Polymer

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Katherina Haase, Jonathan Perez Andrade, Mike Hambsch, Vithyasaahar Sethumadhavan, Waner He, Tsuyoshi Michinobu, Prashant Sonar, Stefan C. B. Mannsfeld
{"title":"All‐Solution Processed OFETs from Non‐Chlorinated Solvents Based on New Isoindigo‐Based Conjugated Polymer","authors":"Katherina Haase, Jonathan Perez Andrade, Mike Hambsch, Vithyasaahar Sethumadhavan, Waner He, Tsuyoshi Michinobu, Prashant Sonar, Stefan C. B. Mannsfeld","doi":"10.1002/aelm.202500375","DOIUrl":null,"url":null,"abstract":"Here, an Isoindigo (IID) comprised with Naphthodithiophene (NDT)‐based low band‐gap donor–acceptor copolymer semiconductor is designed, synthesized, and investigated. The newly reported polymer provides good solubility in a range of halogenated and non‐halogenated solvents due to the attachment of long branched alkyl chains on the Isoindigo core. After optimizing the performance of organic field effect transistors (OFETs) through the use of high‐boiling‐point chlorinated solvents, A similar approach is followed to realize transistors without the need of using halogenated solvents as a green approach. Well‐working transistors are shown with mobility values in a similar range as obtained for OFETs with films prepared from halogenated solvents, while significantly reducing the environmental impact. Finally, all‐solution‐processed, flexible OFETs are prepared without the use of halogenated solvents, which is an important step in the view of potential large area production of flexible electronics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"19 1","pages":""},"PeriodicalIF":5.3000,"publicationDate":"2025-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/aelm.202500375","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

Here, an Isoindigo (IID) comprised with Naphthodithiophene (NDT)‐based low band‐gap donor–acceptor copolymer semiconductor is designed, synthesized, and investigated. The newly reported polymer provides good solubility in a range of halogenated and non‐halogenated solvents due to the attachment of long branched alkyl chains on the Isoindigo core. After optimizing the performance of organic field effect transistors (OFETs) through the use of high‐boiling‐point chlorinated solvents, A similar approach is followed to realize transistors without the need of using halogenated solvents as a green approach. Well‐working transistors are shown with mobility values in a similar range as obtained for OFETs with films prepared from halogenated solvents, while significantly reducing the environmental impact. Finally, all‐solution‐processed, flexible OFETs are prepared without the use of halogenated solvents, which is an important step in the view of potential large area production of flexible electronics.
基于新型等靛蓝基共轭聚合物的非氯化溶剂全溶液加工ofet
本文设计、合成并研究了一种由萘二噻吩(NDT)基低带隙给体-受体共聚物半导体组成的Isoindigo (IID)。新报道的聚合物在一系列卤化和非卤化溶剂中具有良好的溶解性,这是由于长支链烷基链附着在Isoindigo核上。在通过使用高沸点氯化溶剂优化有机场效应晶体管(ofet)的性能之后,采用类似的方法来实现不需要使用卤化溶剂的晶体管,这是一种绿色方法。工作良好的晶体管具有与卤化溶剂制备薄膜的ofet相似的迁移率值,同时显着减少了对环境的影响。最后,在不使用卤化溶剂的情况下制备了全溶液加工的柔性ofet,这是潜在的柔性电子大面积生产的重要一步。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Advanced Electronic Materials
Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.00
自引率
3.20%
发文量
433
期刊介绍: Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
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