Rudolph Holley III, Quinn C. Burlingame and Yueh-Lin Loo
{"title":"Mapping the polymorphic phase transformations of CsPbI3 perovskite thin films","authors":"Rudolph Holley III, Quinn C. Burlingame and Yueh-Lin Loo","doi":"10.1039/D5TC01126D","DOIUrl":null,"url":null,"abstract":"<p >Inorganic perovskite CsPbI<small><sub>3</sub></small> has a bandgap of 1.7 eV, making it an ideal complementary absorber to Si for integration into tandem solar cells. However, the black, photoactive CsPbI<small><sub>3</sub></small> phases are metastable and readily transform into a yellow non-perovskite δ-CsPbI<small><sub>3</sub></small> phase at room temperature, posing a significant challenge to long-term device stability. In this study, we investigate the temperature-dependent dynamics of these phase transitions in CsPbI<small><sub>3</sub></small> thin films using a combination of <em>in situ</em> X-ray diffraction and time-resolved optical microscopy. We find the transformation rate to be highly temperature-dependent, with the fastest conversion occurring at 225 °C, where 50% of the film transformed to δ-CsPbI<small><sub>3</sub></small> within 17 minutes. To identify processing temperatures with longer phase-stability windows, we used the time- and temperature-dependent phase dynamics data to generate a time-temperature-transformation diagram for thin film CsPbI<small><sub>3</sub></small>. Processing near the peak conversion temperature must be completed within two minutes to retain black-phase purity, while processing above 280 °C or below 150 °C provides a much wider processing window with <1% conversion to δ-CsPbI<small><sub>3</sub></small> occurring after 10 minutes. Conversely, it may be useful to hold CsPbI<small><sub>3</sub></small> solar cells or thin films with phase-stabilizing modifications near 225 °C to accelerate potential phase transitions and maximally stress their stability.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 38","pages":" 19654-19659"},"PeriodicalIF":5.1000,"publicationDate":"2025-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://pubs.rsc.org/en/content/articlepdf/2025/tc/d5tc01126d?page=search","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Chemistry C","FirstCategoryId":"1","ListUrlMain":"https://pubs.rsc.org/en/content/articlelanding/2025/tc/d5tc01126d","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Inorganic perovskite CsPbI3 has a bandgap of 1.7 eV, making it an ideal complementary absorber to Si for integration into tandem solar cells. However, the black, photoactive CsPbI3 phases are metastable and readily transform into a yellow non-perovskite δ-CsPbI3 phase at room temperature, posing a significant challenge to long-term device stability. In this study, we investigate the temperature-dependent dynamics of these phase transitions in CsPbI3 thin films using a combination of in situ X-ray diffraction and time-resolved optical microscopy. We find the transformation rate to be highly temperature-dependent, with the fastest conversion occurring at 225 °C, where 50% of the film transformed to δ-CsPbI3 within 17 minutes. To identify processing temperatures with longer phase-stability windows, we used the time- and temperature-dependent phase dynamics data to generate a time-temperature-transformation diagram for thin film CsPbI3. Processing near the peak conversion temperature must be completed within two minutes to retain black-phase purity, while processing above 280 °C or below 150 °C provides a much wider processing window with <1% conversion to δ-CsPbI3 occurring after 10 minutes. Conversely, it may be useful to hold CsPbI3 solar cells or thin films with phase-stabilizing modifications near 225 °C to accelerate potential phase transitions and maximally stress their stability.
期刊介绍:
The Journal of Materials Chemistry is divided into three distinct sections, A, B, and C, each catering to specific applications of the materials under study:
Journal of Materials Chemistry A focuses primarily on materials intended for applications in energy and sustainability.
Journal of Materials Chemistry B specializes in materials designed for applications in biology and medicine.
Journal of Materials Chemistry C is dedicated to materials suitable for applications in optical, magnetic, and electronic devices.
Example topic areas within the scope of Journal of Materials Chemistry C are listed below. This list is neither exhaustive nor exclusive.
Bioelectronics
Conductors
Detectors
Dielectrics
Displays
Ferroelectrics
Lasers
LEDs
Lighting
Liquid crystals
Memory
Metamaterials
Multiferroics
Photonics
Photovoltaics
Semiconductors
Sensors
Single molecule conductors
Spintronics
Superconductors
Thermoelectrics
Topological insulators
Transistors