{"title":"No-heating deposition of ferroelectric epitaxial Hf0.5Zr0.5O2 films using a sputtering method with precise RF power density and thickness control","authors":"Takanori Mimura, Yoshiko Nakamura, Yutaro Tsuchiya, Kazuki Okamoto, Hiroshi Funakubo","doi":"10.1016/j.jmat.2025.101129","DOIUrl":null,"url":null,"abstract":"The no-heating deposition of (111)-oriented epitaxial (Hf<sub>0.5</sub>Zr<sub>0.5</sub>)O<sub>2</sub> films was successfully achieved on (111) indium tin oxide//(111) yttria-stabilized zirconia substrates using a radio-frequency (RF) magnetron sputtering method. As the RF power density was increased, the crystal phase changed sequentially from the tetragonal, the orthorhombic, and then to the monoclinic phase. A similar trend in the crystal phase was also observed with increasing film thickness. The (Hf<sub>0.5</sub>Zr<sub>0.5</sub>)O<sub>2</sub> film exhibited ferroelectric properties comparable to the (Y<sub>0.07</sub>Hf<sub>0.93</sub>)O<sub>2</sub> film previously produced <em>via</em> non-heating film deposition. Upon heat treatment at 1000 °C, the crystal phase of the film transitioned from the orthorhombic phase to the monoclinic phase, indicating that the stability of the orthorhombic phase is low compared with (Y<sub>0.07</sub>Hf<sub>0.93</sub>)O<sub>2</sub>. Therefore, precise control of the RF power density and film thickness is essential for preparing ferroelectric (Hf<sub>0.5</sub>Zr<sub>0.5</sub>)O<sub>2</sub> films without heating.","PeriodicalId":16173,"journal":{"name":"Journal of Materiomics","volume":"21 1","pages":""},"PeriodicalIF":9.6000,"publicationDate":"2025-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materiomics","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1016/j.jmat.2025.101129","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
The no-heating deposition of (111)-oriented epitaxial (Hf0.5Zr0.5)O2 films was successfully achieved on (111) indium tin oxide//(111) yttria-stabilized zirconia substrates using a radio-frequency (RF) magnetron sputtering method. As the RF power density was increased, the crystal phase changed sequentially from the tetragonal, the orthorhombic, and then to the monoclinic phase. A similar trend in the crystal phase was also observed with increasing film thickness. The (Hf0.5Zr0.5)O2 film exhibited ferroelectric properties comparable to the (Y0.07Hf0.93)O2 film previously produced via non-heating film deposition. Upon heat treatment at 1000 °C, the crystal phase of the film transitioned from the orthorhombic phase to the monoclinic phase, indicating that the stability of the orthorhombic phase is low compared with (Y0.07Hf0.93)O2. Therefore, precise control of the RF power density and film thickness is essential for preparing ferroelectric (Hf0.5Zr0.5)O2 films without heating.
期刊介绍:
The Journal of Materiomics is a peer-reviewed open-access journal that aims to serve as a forum for the continuous dissemination of research within the field of materials science. It particularly emphasizes systematic studies on the relationships between composition, processing, structure, property, and performance of advanced materials. The journal is supported by the Chinese Ceramic Society and is indexed in SCIE and Scopus. It is commonly referred to as J Materiomics.