Research on the lifetime model of IGBT modules based on coupling failure of bonding wire and solder layer

Abstract

To address the issues of insulated gate bipolar transistor module failure and lifetime prediction, a physical model of the insulated gate bipolar transistor module has been established. Through thermo-electrical structural coupling simulations, the failure mechanisms of the bonding wire and solder layer have been analyzed. Based on the failure mechanisms of both components, a lifetime model for insulated gate bipolar transistor modules, considering the coupling failures of the bonding wire and solder layer, has been constructed. Additionally, the failure model has been fitted using data from power cycling tests, and a comparative analysis has been conducted between the parallel failure lifetime model and the energy-based lifetime model and Coffin-Manson lifetime model in terms of prediction accuracy. The results indicate that the insulated gate bipolar transistor module lifetime model based on parallel failures of the bonding wire and solder layer has an average error of less than 5 %, reducing the error by 7.74 % compared to the classical lifetime model. Furthermore, it shows a 59.38 % reduction in error compared to the energy-based lifetime model that considers only solder layer failure, significantly improving prediction accuracy. The development of the model and its results provide important reference significance for the reliability assessment of insulated gate bipolar transistor modules.