Comparative effects of plasma treatments on SiO2 surface and bonding performance for wafer and hybrid bonding

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-09-16 DOI:10.1016/j.sse.2025.109246

Sung-Min Park , Sang Hyun Jung , Joong-Heon Kim , Seung Heon Shin , Jaejin Lee

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Abstract

We investigate the effects of plasma on SiO₂ surfaces in various plasma environments, including Ar, O₂, and N₂, under identical plasma conditions for low-temperature annealing in SiO₂/SiO₂ wafer bonding. After plasma treatments, no damage is observed on the SiO₂ surface, which is comparable to post-CMP SiO₂. With the Ar and O₂ plasma treatments and XPS analysis, the SiO₂ surface shows a Si-OH-rich surface and changes to more hydrophilic properties. Although N₂ plasma treatment results in a few isolated voids being observed compared to O₂ plasma treatment, N₂ plasma treatment will be a suitable choice for Cu/SiO₂ hybrid bonding thanks to its highest bonding strength compared to other plasma treatments and the ability to avoid Cu oxidation. On the other hand, O₂ plasma treatment on SiO₂ surface is the most effective way for SiO₂/SiO₂ wafer bonding providing excellent hydrophilicity, strong bonding strength, and minimal bonding voids.

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等离子体处理对硅片和杂化键合SiO2表面和键合性能的影响

在相同的等离子体条件下，研究了不同等离子体环境下等离子体对SiO2表面的影响，包括Ar、O2和N2，用于SiO2/SiO2晶圆键合的低温退火。等离子体处理后，SiO2表面未观察到任何损伤，这与cmp后的SiO2相当。通过Ar和O2等离子体处理和XPS分析，SiO2表面呈现出富含si - oh的表面，并转变为更亲水的性质。尽管与O2等离子体处理相比，N2等离子体处理只会导致一些孤立的空洞，但由于与其他等离子体处理相比，N2等离子体处理具有最高的结合强度，并且能够避免Cu氧化，因此将成为Cu/SiO2杂化键合的合适选择。另一方面，在SiO2表面进行O2等离子体处理是最有效的SiO2/SiO2晶圆键合方式，具有优异的亲水性、强的键合强度和最小的键合空洞。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.