Maxim Yapryntsev, Oleg Ivanov, Aleksandr Pavlov, Ekaterina Yapryntseva
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引用次数: 0
Abstract
Transition metal ditellurides (CrTe2, MoTe2, WTe2) are promising materials for spintronics and phase-change electronics. However, their synthesis by conventional methods is challenging. The process is time-consuming and often yields non-stoichiometric products due to the high volatility of tellurium. Herein, we report a single-stage, ultrafast synthesis of these compounds via a novel Pressureless Reactive Spark Plasma Sintering (PRSPS) method. We first demonstrate that the standard reactive SPS approach, even under minimal pressure (5 MPa), is unsuitable for systems with low-melting-point components, as it causes the extrusion of molten tellurium from the reaction zone. To overcome this, a bespoke, quasi-sealed die assembly was engineered and successfully implemented, isolating the reactants from external pressure and preventing material loss. Using this pressureless method, phase-pure and highly crystalline powders of CrTe2, MoTe2, and WTe2 were successfully synthesized in a record time of just 15 min. Comprehensive characterization by XRD, SEM, and EDS confirmed their phase purity, stoichiometric composition (M:Te ≈ 1:2), and microcrystalline plate-like morphology. This method represents a paradigm shift in chalcogenide synthesis, reducing process times from days to minutes and providing a scalable route to high-quality powders.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.