Pressureless spark plasma sintering: A new one-step route to (Cr, Mo, W)Te2 synthesis

IF 4.6 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Maxim Yapryntsev, Oleg Ivanov, Aleksandr Pavlov, Ekaterina Yapryntseva
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引用次数: 0

Abstract

Transition metal ditellurides (CrTe2, MoTe2, WTe2) are promising materials for spintronics and phase-change electronics. However, their synthesis by conventional methods is challenging. The process is time-consuming and often yields non-stoichiometric products due to the high volatility of tellurium. Herein, we report a single-stage, ultrafast synthesis of these compounds via a novel Pressureless Reactive Spark Plasma Sintering (PRSPS) method. We first demonstrate that the standard reactive SPS approach, even under minimal pressure (5 MPa), is unsuitable for systems with low-melting-point components, as it causes the extrusion of molten tellurium from the reaction zone. To overcome this, a bespoke, quasi-sealed die assembly was engineered and successfully implemented, isolating the reactants from external pressure and preventing material loss. Using this pressureless method, phase-pure and highly crystalline powders of CrTe2, MoTe2, and WTe2 were successfully synthesized in a record time of just 15 min. Comprehensive characterization by XRD, SEM, and EDS confirmed their phase purity, stoichiometric composition (M:Te ≈ 1:2), and microcrystalline plate-like morphology. This method represents a paradigm shift in chalcogenide synthesis, reducing process times from days to minutes and providing a scalable route to high-quality powders.
无压火花等离子烧结:一步合成(Cr, Mo, W)Te2的新途径
过渡金属二碲化物(CrTe2, MoTe2, WTe2)是一种很有前途的自旋电子学和相变电子学材料。然而,用传统方法合成它们是具有挑战性的。这个过程很耗时,而且由于碲的高挥发性,通常会产生非化学计量的产物。在此,我们报告了一种新的无压反应放电等离子烧结(PRSPS)方法单阶段超快合成这些化合物。我们首先证明了标准反应性SPS方法,即使在最小压力(5 MPa)下,也不适合具有低熔点组分的系统,因为它会导致熔融碲从反应区挤出。为了克服这一问题,设计了一种定制的准密封模具组件,并成功实施,将反应物与外部压力隔离,防止材料损失。利用这种无压方法,仅在15分钟的时间内就成功合成了相纯、高结晶的CrTe2、MoTe2和WTe2粉末。通过XRD、SEM和EDS综合表征,证实了其相纯度、化学计量成分(M:Te≈1:2)和微晶片状形貌。这种方法代表了硫族化物合成的范式转变,将工艺时间从几天减少到几分钟,并提供了一条可扩展的高质量粉末路线。
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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