{"title":"Self-powered and broadband response photothermoelectric detector based on Bi2Te3 nanowires and carbon nanotubes sandwich structure","authors":"Dongliang Zhang , Tianliang Feng , Haigang Hou, Jian Yang, Guiwu Liu, Junlin Liu, Guanjun Qiao","doi":"10.1016/j.mssp.2025.110088","DOIUrl":null,"url":null,"abstract":"<div><div>The broadband photodetectors recently attract widespread interest since the detector with multiple band response is highly desired. The traditional photodetector is inferior than thermal detector in meeting such requirement because the band gap transition dependent on sufficient photon energy, and the long wavelength region with weak energy may beyond detection. Here, bismuth telluride (Bi<sub>2</sub>Te<sub>3</sub>) nanowires (∼21.5 nm diameter, aspect ratios up to 80) are embedded between carbon nanotube (CNT) layers to construct a sandwich-structured detector for broadband detection from ultraviolet to near-infrared. A temperature gradient induced by localized photothermal conversion drives directional flow of charge carriers to generate electric potential via Seebeck effect, enabling self-powered operation of the detector without external power sources. The I-V curves and position dependent photovoltage of the detector based on CNT/Bi<sub>2</sub>Te<sub>3</sub>/CNT film confirm that the mechanism of signal generation stems from photothermoelectric effect. The CNT layers serve as both an efficient photothermal conversion layer and charge transport channel, while simultaneously forming an energy filtering effect with Bi<sub>2</sub>Te<sub>3</sub> to improve the Seebeck coefficient. As a result, the CNT/Bi<sub>2</sub>Te<sub>3</sub>/CNT detector achieves efficient wideband detection across 380 nm–1550 nm, with a maximum specific detectivity reaches 1.27 × 10<sup>9</sup> cm Hz<sup>1/2</sup> W<sup>−1</sup>, representing a ∼115 % enhancement over a pure CNT detector. This work offers significant reference for the preparation of nanowire and the design of high-performance photothermoelectric detector.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110088"},"PeriodicalIF":4.6000,"publicationDate":"2025-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125008261","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The broadband photodetectors recently attract widespread interest since the detector with multiple band response is highly desired. The traditional photodetector is inferior than thermal detector in meeting such requirement because the band gap transition dependent on sufficient photon energy, and the long wavelength region with weak energy may beyond detection. Here, bismuth telluride (Bi2Te3) nanowires (∼21.5 nm diameter, aspect ratios up to 80) are embedded between carbon nanotube (CNT) layers to construct a sandwich-structured detector for broadband detection from ultraviolet to near-infrared. A temperature gradient induced by localized photothermal conversion drives directional flow of charge carriers to generate electric potential via Seebeck effect, enabling self-powered operation of the detector without external power sources. The I-V curves and position dependent photovoltage of the detector based on CNT/Bi2Te3/CNT film confirm that the mechanism of signal generation stems from photothermoelectric effect. The CNT layers serve as both an efficient photothermal conversion layer and charge transport channel, while simultaneously forming an energy filtering effect with Bi2Te3 to improve the Seebeck coefficient. As a result, the CNT/Bi2Te3/CNT detector achieves efficient wideband detection across 380 nm–1550 nm, with a maximum specific detectivity reaches 1.27 × 109 cm Hz1/2 W−1, representing a ∼115 % enhancement over a pure CNT detector. This work offers significant reference for the preparation of nanowire and the design of high-performance photothermoelectric detector.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
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Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.