Three-in-one 2D perovskite functional gated organic thin-film transistors: Integrated sensing, memory and computing

Abstract

Sensing-memory-computing (SMC) technology, that integrates the information perception, memory and processing functions in one physical unit, has promised an innovative architecture for future machine vision system with extreme energy and time efficiency by fundamentally eliminating the interfaces between the separation units in the current systems. To achieve this goal, it is required to develop novel device structure for integrating multiple functional attributes. This study presents an innovative organic thin-film transistor (OTFT) based on a two-dimensional (2D) perovskite as functional gate dielectric, that integrates the photodetection, memory, and computing in one unit by synergistically exploiting the effects of ion migration, optoelectronic property, and photo-generated charge trapping. The OTFTs exhibit excellent nonvolatile memory (NVM) properties, with the low programming/erasing (P/E) voltages of ±10 V, ultrafast P/E ability of 5 ms, highly stable retention and reliable endurance. The three-in-one OTFTs also demonstrate: (1) real-time physiological signal monitoring through optical sensing, (2) binary reconfigurable (AND and OR) logic-in-memory circuits and ternary operations (NOT, NAND, and NOR) in the logic-in-memory circuits, (3) emulation of optoelectronic synaptic plasticity. Furthermore, the OTFTs array effectively perceives and stores patterns of “J”, “L”, and “U” letters with retina-like functionality. Our work establishes a promising paradigm for developing high-performance, energy-efficient SMC hardware for next-generation artificial intelligent applications.