{"title":"Supercritical fluid-mediated exfoliation of NbSe2 and fabrication of RGO-NbSe2 nanostructures for enhanced hydrogen evolution","authors":"Jeyaraman Anandha Raj , Murugesan Arunkumar , Pitchai Thangasamy , Marappan Sathish","doi":"10.1016/j.mssp.2025.110090","DOIUrl":null,"url":null,"abstract":"<div><div>Uniform rod-like NbSe<sub>2</sub> nanostructures were precisely fabricated from bulk NbSe<sub>2</sub> using a one-pot, rapid supercritical fluid process, where a mildly basic solution acted as the exfoliating agent. The formation of NbSe<sub>2</sub> nanorods was confirmed by microscopic analyses. XRD, Raman, and XPS results further validated the successful exfoliation and indicated partial surface oxidation of NbSe<sub>2</sub> into Nb<sub>2</sub>O<sub>5</sub> nanostructures during SCF processing. Interestingly, the formation of rod-like NbSe<sub>2</sub> was largely suppressed in the synthesis of RGO-NbSe<sub>2</sub> nanocomposites, as the RGO nanosheets hindered the growth of such morphologies. The synthesized RGO-NbSe<sub>2</sub> nanocomposites exhibited outstanding electrocatalytic activity toward hydrogen evolution, requiring only ∼123 mV overpotential to reach 10 mA cm<sup>−2</sup>. This performance notably surpassed that of the pristine NbSe<sub>2</sub> nanorods, which required ∼355 mV for the same current density. This enhancement is attributed to the efficient exfoliation of bulk NbSe<sub>2</sub> into nanosheets, which enhances the exposure of reactive edge sites and promotes the formation of heterostructures with favourable hydrogen adsorption characteristics. The integration with highly conductive RGO further contributes to charge transfer and overall catalytic synergy.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110090"},"PeriodicalIF":4.6000,"publicationDate":"2025-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125008285","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Uniform rod-like NbSe2 nanostructures were precisely fabricated from bulk NbSe2 using a one-pot, rapid supercritical fluid process, where a mildly basic solution acted as the exfoliating agent. The formation of NbSe2 nanorods was confirmed by microscopic analyses. XRD, Raman, and XPS results further validated the successful exfoliation and indicated partial surface oxidation of NbSe2 into Nb2O5 nanostructures during SCF processing. Interestingly, the formation of rod-like NbSe2 was largely suppressed in the synthesis of RGO-NbSe2 nanocomposites, as the RGO nanosheets hindered the growth of such morphologies. The synthesized RGO-NbSe2 nanocomposites exhibited outstanding electrocatalytic activity toward hydrogen evolution, requiring only ∼123 mV overpotential to reach 10 mA cm−2. This performance notably surpassed that of the pristine NbSe2 nanorods, which required ∼355 mV for the same current density. This enhancement is attributed to the efficient exfoliation of bulk NbSe2 into nanosheets, which enhances the exposure of reactive edge sites and promotes the formation of heterostructures with favourable hydrogen adsorption characteristics. The integration with highly conductive RGO further contributes to charge transfer and overall catalytic synergy.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
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Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.