Structure and thermal stability investigations of (1-x)CaBi4Ti4O15-xNa0.5Bi4.5Ti4O15

IF 4.6 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Haolun Cai, Xiangping Jiang, Chao Chen, Yunjing Chen, Chong Zhao, Benjin Xu, Renfen Zeng, Ting Xiong, Na Tu, Xin Nie
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引用次数: 0

Abstract

The successful synthesis of (1-x)CaBi4Ti4O15-xNa0.5Bi4.5Ti4O15 (CNBT-x, x = 0, 0.3, 0.5, 0.7, 1) high-temperature piezoelectric ceramics has been accomplished through the utilisation of a conventional solid-state reaction method. The primary focus of our research pertains to the ceramic structure of solid solutions, piezoelectric properties, and ferroelectric characteristics. Adding Na0.5Bi4.5Ti4O15 to CaBi4Ti4O15 promotes lattice distortion, inhibits grain growth, reduces oxygen vacancies, and improves the d33 value of CBT. When x = 0.7, the ceramics piezoelectric performance d33 value of 24 pC/N, which is significantly higher than that of conventional CBT ceramics (d33 = 8 pC/N). Furthermore, the Curie temperature (TC) of this material is 685 °C. The d33 value remains as high as 21 pC/N even after annealing at 600 °C, indicating excellent thermal stability. The incorporation of Na+ and Bi3+ ions markedly reduced the oxygen vacancy concentration, resulting in resistivities reaching up to 107 Ω cm at 500 °C. Additionally, the material exhibits excellent thermal stability at elevated temperatures and a kp value charge ranging from 5.2 % to 6 % (less than 16 %) over the temperature range from room temperature to 450 °C. The above properties suggest that CNBT-0.7 ceramics are ideal for use in high-temperature piezoelectric sensors.
(1-x)CaBi4Ti4O15-xNa0.5Bi4.5Ti4O15的结构和热稳定性研究
利用传统的固相反应方法成功合成了(1-x)CaBi4Ti4O15-xNa0.5Bi4.5Ti4O15 (CNBT-x, x = 0,0.3, 0.5, 0.7, 1)高温压电陶瓷。我们的主要研究重点是固溶体的陶瓷结构、压电特性和铁电特性。在CaBi4Ti4O15中加入Na0.5Bi4.5Ti4O15可以促进晶格畸变,抑制晶粒生长,减少氧空位,提高CBT的d33值。当x = 0.7时,陶瓷的压电性能d33值为24 pC/N,显著高于常规CBT陶瓷(d33 = 8 pC/N)。此外,该材料的居里温度(TC)为685℃。即使在600℃退火后,d33值仍高达21 pC/N,具有良好的热稳定性。Na+和Bi3+离子的掺入显著降低了氧空位浓度,在500℃时电阻率高达107 Ω cm。此外,该材料在高温下表现出优异的热稳定性,在室温至450°C的温度范围内,kp值电荷范围为5.2%至6%(小于16%)。上述特性表明CNBT-0.7陶瓷是高温压电传感器的理想选择。
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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