{"title":"Tailoring trap dynamics and luminescence in SrAl2O4:Eu2+,Dy3+-Borotellurite glass composites through boron modification","authors":"Kiran Kalkal, Y. Dwivedi","doi":"10.1016/j.mssp.2025.110065","DOIUrl":null,"url":null,"abstract":"<div><div>SrAl<sub>2</sub>O<sub>4</sub>:Eu<sup>2+</sup>,Dy<sup>3+</sup> represents a prototypical persistent phosphor, renowned for its pronounced green emission. However, its practical application in device integration is significantly limited by inadequate thermal stability and pronounced vulnerability to degradation under certain environmental conditions. Embedding such phosphors into optimized glass matrices offers a strategy to preserve luminescence while enabling structural stability. In this work, SrAl<sub>2</sub>O<sub>4</sub>:Eu<sup>2+</sup>,Dy<sup>3+</sup> phosphor was incorporated into borotellurite (BT) glasses with varying B<sub>2</sub>O<sub>3</sub> content to probe the interplay between glass network modification and persistent luminescence behavior. Structural analyses confirmed the retention of SrAl<sub>2</sub>O<sub>4</sub> crystallinity while embedded in the amorphous glass. The electron microscopy analysis revealed uniform phosphor dispersion in the glass. Thermal studies showed thermal stability up to 600 °C. Optical characterization showed an increase in the bandgap from 3.60 to 3.98 eV with boron incorporation in BT glass, while the composites exhibited bandgap variations arising from matrix-induced modifications of the Eu<sup>2+</sup> environment. Strong green emission (∼520 nm) was retained across all composites, with subtle CIE color coordinate shift. Thermoluminescence revealed trap depths of 0.65–0.98 eV, with SrAl:BT1 composite exhibiting the most favourable trap distribution and the longest afterglow lifetime (∼8000 s). These findings establish phosphor-glass composite as a powerful route to stabilize and tune SrAl-phosphor optical properties, offering a pathway toward persistent lighting, optical data storage, security markers, and advanced photonic devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110065"},"PeriodicalIF":4.6000,"publicationDate":"2025-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125008029","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
SrAl2O4:Eu2+,Dy3+ represents a prototypical persistent phosphor, renowned for its pronounced green emission. However, its practical application in device integration is significantly limited by inadequate thermal stability and pronounced vulnerability to degradation under certain environmental conditions. Embedding such phosphors into optimized glass matrices offers a strategy to preserve luminescence while enabling structural stability. In this work, SrAl2O4:Eu2+,Dy3+ phosphor was incorporated into borotellurite (BT) glasses with varying B2O3 content to probe the interplay between glass network modification and persistent luminescence behavior. Structural analyses confirmed the retention of SrAl2O4 crystallinity while embedded in the amorphous glass. The electron microscopy analysis revealed uniform phosphor dispersion in the glass. Thermal studies showed thermal stability up to 600 °C. Optical characterization showed an increase in the bandgap from 3.60 to 3.98 eV with boron incorporation in BT glass, while the composites exhibited bandgap variations arising from matrix-induced modifications of the Eu2+ environment. Strong green emission (∼520 nm) was retained across all composites, with subtle CIE color coordinate shift. Thermoluminescence revealed trap depths of 0.65–0.98 eV, with SrAl:BT1 composite exhibiting the most favourable trap distribution and the longest afterglow lifetime (∼8000 s). These findings establish phosphor-glass composite as a powerful route to stabilize and tune SrAl-phosphor optical properties, offering a pathway toward persistent lighting, optical data storage, security markers, and advanced photonic devices.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.