Low-damage precision slicing of SiC by simultaneous dual-beam laser-driven crack expansion of silicon carbide

Abstract

Silicon carbide (SiC) is a pivotal substrate material for high-power electronics due to its superior thermal and mechanical properties, yet achieving low-damage, high-efficiency processing remains challenging. Here, we propose a synchronous dual-beam laser strategy to optimize internal modification in SiC. A numerical model to simulate the transient temperature field and stress distribution during dual-beam laser interaction within SiC, elucidating the mechanisms of crack propagation and material modification. Experimental results demonstrate that synchronous dual-beam processing significantly enhances crack propagation efficiency compared to conventional single-beam asynchronous processing. Specifically, compared to prior studies, the average lateral crack length increases by 88 %, from 162.66 μm to 306.65 μm, and the maximum peel stress is markedly reduced to just 2.738 MPa. This reduction in mechanical stress minimizes subsurface damage, thereby improving the integrity of processed SiC substrates. Our findings offer valuable insights into the interplay between laser parameters and material response, suggesting a potentially scalable strategy for precision laser slicing of SiC wafers with potentially reduced thermal and mechanical defects. Our approach advances the understanding of laser-induced material restructuring in wide-bandgap semiconductors and offers a scalable pathway for industrial applications requiring precision and cost-efficiency.