Impact of Er3+ doping on temperature coefficient of resistivity and magnetoresistance properties of La0.7Ca0.3MnO3

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-09-20 DOI:10.1016/j.mssp.2025.110085

Xuemei Deng, Jingang Guo, Shuang Ding, Yuchen Xie, Hui Zhang, Qingming Chen, Yule Li

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Abstract

Improving the temperature coefficient of resistance (TCR) and magnetoresistance (MR) properties of perovskite ceramics under low external magnetic fields, to enhance their performance in devices such as infrared sensors and magnetic storage systems, has become one of the key research directions. Nevertheless, the underlying electromagnetic transport mechanism remains unclear, and further performance optimization is required to meet practical application demands. Herein, a series of La_0.7-xEr_xCa_0.3MnO₃ ceramics were synthesized by the sol-gel method. The results indicate that as the doping ratio increases, the resistivity progressively rises. The sample exhibits smooth grain surfaces, clear grain boundaries, and strong grain interconnections. Analysis reveals that doping with Er in La_0.7Ca_0.3MnO₃ (LCMO) introduces lattice distortion, reducing the average ionic radius of the A-site, which leads to a decrease in the unit cell volume and weakens the double-exchange interaction. Within a certain doping range, these changes enhance the magnetoelectric transport properties of LCMO materials. As a result, when x = 0.015, the TCR reaches 47.88 %·K⁻¹, and when x = 0.06, the MR reaches 93.97 %. This study provides new theoretical basis and practical guidance for the development of perovskite-type oxide materials with better performance and offers auxiliary means for the preparation of high TCR and high MR of LCMO materials.

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Er3+掺杂对La0.7Ca0.3MnO3电阻率温度系数和磁阻性能的影响

提高钙钛矿陶瓷在低外加磁场下的电阻温度系数（TCR）和磁阻（MR）性能，以提高其在红外传感器和磁存储系统等器件中的性能，已成为重点研究方向之一。然而，潜在的电磁传输机制尚不清楚，需要进一步的性能优化以满足实际应用需求。本文采用溶胶-凝胶法制备了一系列La0.7-xErxCa0.3MnO3陶瓷。结果表明，随着掺杂比的增大，电阻率逐渐增大。样品表现出光滑的晶粒表面，清晰的晶界和强的晶粒互连。分析表明，在La0.7Ca0.3MnO3 （LCMO）中掺杂Er会引起晶格畸变，使a位的平均离子半径减小，从而导致单体胞体积减小，双交换作用减弱。在一定掺杂范围内，这些变化增强了LCMO材料的磁电输运性能。结果表明，当x = 0.015时，TCR达到47.88%·K−1，当x = 0.06时，MR达到93.97%。本研究为开发性能更好的钙钛矿型氧化物材料提供了新的理论依据和实践指导，为制备高TCR和高MR的LCMO材料提供了辅助手段。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.