New insights into I-line stepper based InGaAs/InP double-heterojunction bipolar transistors (DHBTs)

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-09-17 DOI:10.1016/j.mssp.2025.110076

Soo Cheol Kang , Jin Chul Cho , Jun-Hwan Shin , Dong Woo Park , Eui Su Lee

{"title":"New insights into I-line stepper based InGaAs/InP double-heterojunction bipolar transistors (DHBTs)","authors":"Soo Cheol Kang , Jin Chul Cho , Jun-Hwan Shin , Dong Woo Park , Eui Su Lee","doi":"10.1016/j.mssp.2025.110076","DOIUrl":null,"url":null,"abstract":"<div><div>InGaAs/InP double heterojunction bipolar transistors (DHBTs) are considered promising candidates for high-frequency power amplifier applications in wireless communication, aerospace, and radar systems. Although emitter scaling is essential to enhance the cut-off frequency (fT), the conventional use of electron beam lithography increases process complexity, production cost and reliability issues. As a cost-effective and yield-improving alternative, I-line stepper photolithography has recently regained attention. In this study, an InGaAs/InP DHBT with an emitter width (WE) of 1 μm, an emitter length (LE) of 10 μm and a base width (WB) of 0.5 μm was fabricated using I-line stepper photolithography. By employing optimized epitaxial layers and Ohmic contact formation process, the device exhibits a current gain (β) of 40.7 at VCE = 0 V and an open-base common-emitter breakdown voltage (BVCEO) of 5.1 V at JC = 1 kA/cm2. The fabricated InP DHBTs with WE = 1 μm demonstrate an fT = 262 GHz, indicating potential for applications in ICs operating data rates up to 80 Gbit/s ICs.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110076"},"PeriodicalIF":4.6000,"publicationDate":"2025-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125008133","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

InGaAs/InP double heterojunction bipolar transistors (DHBTs) are considered promising candidates for high-frequency power amplifier applications in wireless communication, aerospace, and radar systems. Although emitter scaling is essential to enhance the cut-off frequency (f_T), the conventional use of electron beam lithography increases process complexity, production cost and reliability issues. As a cost-effective and yield-improving alternative, I-line stepper photolithography has recently regained attention. In this study, an InGaAs/InP DHBT with an emitter width (W_E) of 1 μm, an emitter length (L_E) of 10 μm and a base width (W_B) of 0.5 μm was fabricated using I-line stepper photolithography. By employing optimized epitaxial layers and Ohmic contact formation process, the device exhibits a current gain (β) of 40.7 at V_CE = 0 V and an open-base common-emitter breakdown voltage (BV_CEO) of 5.1 V at J_C = 1 kA/cm². The fabricated InP DHBTs with W_E = 1 μm demonstrate an f_T = 262 GHz, indicating potential for applications in ICs operating data rates up to 80 Gbit/s ICs.

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基于i线步进的InGaAs/InP双异质结双极晶体管（dhbt）的新见解

InGaAs/InP双异质结双极晶体管（dhbt）被认为是无线通信、航空航天和雷达系统中高频功率放大器应用的有前途的候选人。虽然发射极缩放对于提高截止频率（fT）至关重要，但传统的电子束光刻技术增加了工艺复杂性、生产成本和可靠性问题。作为一种具有成本效益和产量提高的替代方法，直线步进光刻技术最近重新引起了人们的关注。采用i线步进光刻技术，制备了发射极宽度（WE）为1 μm、发射极长度（LE）为10 μm、基宽（WB）为0.5 μm的InGaAs/InP DHBT。通过采用优化的外延层和欧姆接触形成工艺，该器件在VCE = 0 V时的电流增益（β）为40.7，在JC = 1 kA/cm2时的开基共发射极击穿电压（BVCEO）为5.1 V。制备的WE = 1 μm的InP dhbt的fT = 262 GHz，表明其在数据速率高达80 Gbit/s的ic中的应用潜力。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.