Min Huang , Hao Cui , Xin He , Hang Zhao , Zhiming Shi , Mingjin Yang
{"title":"Metal oxide-modified Janus HfSSe monolayers for SF6 decomposition gas detection: A DFT investigation","authors":"Min Huang , Hao Cui , Xin He , Hang Zhao , Zhiming Shi , Mingjin Yang","doi":"10.1016/j.mssp.2025.110055","DOIUrl":null,"url":null,"abstract":"<div><div>Accurate detection of gases in gas-insulated switchgear (GIS) is essential for maintaining the safe and stable operation of power systems. Density functional theory (DFT) was employed to investigate the adsorption behavior of typical SF<sub>6</sub> decomposition gases (H<sub>2</sub>S, SO<sub>2</sub>, SOF<sub>2</sub>, and SO<sub>2</sub>F<sub>2</sub>) on NiO-, ZnO-, and Ag<sub>2</sub>O-modified Janus HfSSe monolayers. All three metal oxides preferentially bind to sulfur sites on the HfSSe surface, forming energetically stable configurations. These modifications significantly enhance the monolayer's conductivity, yielding reduced band gaps of 0.45 eV (NiO), 0.42 eV (ZnO), and 0.37 eV (Ag<sub>2</sub>O), while simultaneously improving sensitivity and selectivity toward the target gases. At room temperature (298 K), NiO-HfSSe exhibits favorable desorption times for H<sub>2</sub>S (6.38 s), SO<sub>2</sub> (2.95 s), and SOF<sub>2</sub> (0.03 s), whereas ZnO- and Ag<sub>2</sub>O-HfSSe show optimal desorption for SO<sub>2</sub> at 0.58 s and 15.67 s, respectively. Combined with short recovery times and significant band gap modulation, NiO-, ZnO-, and Ag<sub>2</sub>O-modified HfSSe monolayers demonstrate strong potential as reusable, room-temperature gas sensors. This study provides theoretical insight into the application of these modified monolayers for evaluating the insulation status of GIS equipment, laying the groundwork for future experimental validation and optimization of monolayer-based sensors in practical GIS monitoring applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"201 ","pages":"Article 110055"},"PeriodicalIF":4.6000,"publicationDate":"2025-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125007929","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Accurate detection of gases in gas-insulated switchgear (GIS) is essential for maintaining the safe and stable operation of power systems. Density functional theory (DFT) was employed to investigate the adsorption behavior of typical SF6 decomposition gases (H2S, SO2, SOF2, and SO2F2) on NiO-, ZnO-, and Ag2O-modified Janus HfSSe monolayers. All three metal oxides preferentially bind to sulfur sites on the HfSSe surface, forming energetically stable configurations. These modifications significantly enhance the monolayer's conductivity, yielding reduced band gaps of 0.45 eV (NiO), 0.42 eV (ZnO), and 0.37 eV (Ag2O), while simultaneously improving sensitivity and selectivity toward the target gases. At room temperature (298 K), NiO-HfSSe exhibits favorable desorption times for H2S (6.38 s), SO2 (2.95 s), and SOF2 (0.03 s), whereas ZnO- and Ag2O-HfSSe show optimal desorption for SO2 at 0.58 s and 15.67 s, respectively. Combined with short recovery times and significant band gap modulation, NiO-, ZnO-, and Ag2O-modified HfSSe monolayers demonstrate strong potential as reusable, room-temperature gas sensors. This study provides theoretical insight into the application of these modified monolayers for evaluating the insulation status of GIS equipment, laying the groundwork for future experimental validation and optimization of monolayer-based sensors in practical GIS monitoring applications.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.