Spin-orbit coupling in Zn0.05Cd0.95O/CdO heterostructures grown by spray pyrolysis

IF 2 4区 材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS
L. M. B. Vargas , M. J. da Silva , K. Bolaños , M. L. Peres , M. P. F. de Godoy , S. de Castro
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引用次数: 0

Abstract

This work studies the structural, morphological and electrical properties of a heterostructure, Zn0.05Cd0.95O/CdO, comparing them with the films that compose it, CdO and Zn0.05Cd0.95O, grown on glass substrate using the spray pyrolysis technique. The heterostructure presented higher crystalline and crystallite size compared to the separate films. The scanning electron microscopy (SEM) images revealed a well-defined interface, thus proving that the heterostructure was formed. In the electrical characterization, both films presented semiconductor-like behavior in resistance in the range of 100K to 1.9K, while the heterostructure presented this behavior up to 3.5K and below this temperature a drop in the resistance was observed. This decrease is attributed to the presence of spin-orbit coupling (SOC) that was confirmed in the magnetoresistance (MR) measurements, with only the heterostructure presenting weak antilocalization (WAL) below 4.2 K. This effect was not observed in the individual films, suggesting that it is an intrinsic property of the interface due to the formation of a two-dimensional electron gas (2DEG). For the analysis of the SOC effect, the Hikami Larkin Nagaoka (HLN) model was used, which was fitted to the MR curve of the heterostructure only for the lowest temperature. The parameters obtained with this model were the phase coherence length Lϕ=(142.8±0.1)nm and the spin-orbit scattering length Lso=(232.2±0.1)nm at T=1.9K, indicating that this heterostructure may have application in the field of spintronics.
喷雾热解制备Zn0.05Cd0.95O/CdO异质结构的自旋轨道耦合
本文研究了异质结构Zn0.05Cd0.95O/CdO的结构、形态和电学性质,并将其与用喷雾热解技术在玻璃基板上生长的由CdO和Zn0.05Cd0.95O组成的薄膜进行了比较。与单独薄膜相比,异质结构具有更高的晶粒和晶粒尺寸。扫描电镜(SEM)图像显示了一个明确的界面,从而证明异质结构的形成。在电学表征中,两种薄膜在100K至1.9K范围内的电阻都表现出类似半导体的行为,而异质结构的电阻在3.5K范围内表现出类似半导体的行为,在此温度以下,电阻下降。这种下降归因于自旋轨道耦合(SOC)的存在,这在磁电阻(MR)测量中得到了证实,只有异质结构在4.2 K以下表现出弱反局域化(WAL)。在单个薄膜中没有观察到这种效应,这表明它是由于二维电子气体(2DEG)的形成而形成的界面的固有特性。对于SOC效应的分析,采用Hikami Larkin Nagaoka (HLN)模型,该模型仅在最低温度下拟合异质结构的MR曲线。该模型在T=1.9K时得到相相干长度Lϕ=(142.8±0.1)nm和自旋轨道散射长度Lso=(232.2±0.1)nm,表明该异质结构在自旋电子学领域具有应用前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Thin Solid Films
Thin Solid Films 工程技术-材料科学:膜
CiteScore
4.00
自引率
4.80%
发文量
381
审稿时长
7.5 months
期刊介绍: Thin Solid Films is an international journal which serves scientists and engineers working in the fields of thin-film synthesis, characterization, and applications. The field of thin films, which can be defined as the confluence of materials science, surface science, and applied physics, has become an identifiable unified discipline of scientific endeavor.
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