Optimization of linear and nonlinear optical parameters by silver halides incorporation in selenium-based thin films Se95(AgX)5

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Thin Solid Films Pub Date : 2025-09-12 DOI:10.1016/j.tsf.2025.140797

Anil Kumar , S.S. Fouad , H. Atiya , Neeraj Mehta

{"title":"Optimization of linear and nonlinear optical parameters by silver halides incorporation in selenium-based thin films Se95(AgX)5","authors":"Anil Kumar , S.S. Fouad , H. Atiya , Neeraj Mehta","doi":"10.1016/j.tsf.2025.140797","DOIUrl":null,"url":null,"abstract":"<div><div>This study investigates the impact of silver-halide salts (AgCl, AgBr, and AgI) on the optical, electrical, and photoelectrical properties of chalcogenide glass-ceramic thin films, replacing selenium content. Transmission and reflectance spectra were analysed to determine optical constants, bandgap (<span><math><msubsup><mi>E</mi><mi>g</mi><mrow><mi>o</mi><mi>p</mi><mi>t</mi></mrow></msubsup></math></span>), and Urbach energy (<em>Eₑ</em>). The optical bandgap slightly decreased (0.1 eV) for AgCl-doped films but remained stable for AgBr and AgI, while the Urbach energy significantly increased. The refractive index (<em>n</em>) was obtained using Swanepoel’s method, and dielectric constants (<em>ε'</em> and <em>ε\"</em>) were calculated. The infinite dielectric constant (<em>ε<sub>∞</sub></em>) increased from 2.45 (Se) to 3.33 (AgCl), 3.27 (AgBr), and 4.18 (AgI). The films exhibit indirect optical transitions with an optical bandgap of 1.77 to 1.89 eV, analysed using the Sellmeier and Wemple–DiDomenico (WDD) dispersion models. Further, we examined dissipation factor, energy loss functions, conductivities, relaxation time, and non-linear optical properties (<em>n<sub>0</sub>, χ</em>). The results highlight the potential tunability of AgX-doped chalcogenide thin films for optoelectronic applications.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"828 ","pages":"Article 140797"},"PeriodicalIF":2.0000,"publicationDate":"2025-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Thin Solid Films","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0040609025001968","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, COATINGS & FILMS","Score":null,"Total":0}

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Abstract

This study investigates the impact of silver-halide salts (AgCl, AgBr, and AgI) on the optical, electrical, and photoelectrical properties of chalcogenide glass-ceramic thin films, replacing selenium content. Transmission and reflectance spectra were analysed to determine optical constants, bandgap (

E_{g}^{o p t}

), and Urbach energy (Eₑ). The optical bandgap slightly decreased (0.1 eV) for AgCl-doped films but remained stable for AgBr and AgI, while the Urbach energy significantly increased. The refractive index (n) was obtained using Swanepoel’s method, and dielectric constants (ε' and ε") were calculated. The infinite dielectric constant (ε_∞) increased from 2.45 (Se) to 3.33 (AgCl), 3.27 (AgBr), and 4.18 (AgI). The films exhibit indirect optical transitions with an optical bandgap of 1.77 to 1.89 eV, analysed using the Sellmeier and Wemple–DiDomenico (WDD) dispersion models. Further, we examined dissipation factor, energy loss functions, conductivities, relaxation time, and non-linear optical properties (n₀, χ). The results highlight the potential tunability of AgX-doped chalcogenide thin films for optoelectronic applications.

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硒基薄膜Se95(AgX)5中卤化银掺杂对线性和非线性光学参数的优化

本研究考察了卤化银盐（AgCl、AgBr和AgI）替代硒含量对硫系玻璃陶瓷薄膜光学、电学和光电性能的影响。通过分析透射和反射光谱来确定光学常数、带隙（Egopt）和乌尔巴赫能量（Eₑ）。agcl掺杂薄膜的光学带隙略有减小（0.1 eV），但AgBr和AgI的光学带隙保持稳定，而Urbach能量显著增加。用斯瓦内普尔法得到了折射率n，并计算了介电常数ε'和ε"。无限介电常数（ε∞）从2.45 （Se）增加到3.33 （AgCl）、3.27 （AgBr）和4.18 （AgI）。利用Sellmeier和Wemple-DiDomenico （WDD）色散模型分析，薄膜表现出1.77 ~ 1.89 eV的间接光学跃迁。进一步，我们检查了耗散因子、能量损失函数、电导率、弛豫时间和非线性光学性质（n0, χ）。该结果突出了agx掺杂硫系薄膜在光电应用中的潜在可调性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Thin Solid Films 工程技术-材料科学：膜

CiteScore

4.00

自引率

4.80%

发文量

381

审稿时长

7.5 months

期刊介绍： Thin Solid Films is an international journal which serves scientists and engineers working in the fields of thin-film synthesis, characterization, and applications. The field of thin films, which can be defined as the confluence of materials science, surface science, and applied physics, has become an identifiable unified discipline of scientific endeavor.