Extraction of trap densities in Al:HfO2 MIM capacitors using voltage ramp stress measurements

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-09-10 DOI:10.1016/j.sse.2025.109239

Corinna Fohn , Emmanuel Chery , Kristof Croes , Michele Stucchi , Valeri Afanas’ev

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引用次数: 0

Abstract

We present an experimental method to directly evaluate the oxide trap densities in TiN/Al:HfO

_{2}

/TiN capacitors from the low-field current hysteresis in voltage-ramp-stress (VRS) measurements. The extracted densities of deep electron traps are in the 10¹³ cm⁻² range and virtually independent of the Al-doping concentration in HfO

_{2}

(ranging from 2% to 20%). These results indicate that the trapping sites are intrinsic and may be related to polaronic states in disordered HfO

_{2}

. Regarding reproducibility and stability, the measurements were consistent across all samples, except for those with low Al doping, which exhibited increased leakage and degradation likely due to partial crystallization. In degraded samples, conductive paths formed after electrical stress confine the leakage, limiting the sensitivity of the method to local trap densities adjacent to the leakage path.

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利用电压斜坡应力测量提取Al:HfO2 MIM电容器中的陷阱密度

我们提出了一种实验方法，通过电压-斜坡-应力（VRS）测量中的低场电流滞后，直接评估TiN/Al:HfO2/TiN电容器中的氧化物阱密度。深电子阱的提取密度在1013 cm−2范围内，几乎与HfO2中al掺杂浓度（2% ~ 20%）无关。这些结果表明，捕获位点是本征的，可能与无序HfO2中的极化态有关。在再现性和稳定性方面，所有样品的测量结果都是一致的，除了那些低Al掺杂的样品，由于部分结晶可能导致泄漏和降解增加。在降解样品中，电应力后形成的导电路径限制了泄漏，限制了该方法对泄漏路径附近局部陷阱密度的灵敏度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.