Silicon nanowire field-effect transistor biosensors with bowtie antenna

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-09-06 DOI:10.1016/j.sse.2025.109230

Yongqiang Zhang , Kai Li , Nazarii Boichuk , Denys Pustovyi , Valeriia Chekubasheva , Hanlin Long , Mykhailo Petrychuk , Svetlana Vitusevich

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Abstract

In this study, we fabricated high-quality, liquid gate-all-around silicon nanowire (NW) field-effect transistor (FET) biosensors with a gold bowtie antenna using a silicon-on-insulator (SOI) wafer. The electrical and noise properties of these novel NW FETs were investigated under 940 nm light-emitting diode (LED) optical excitation in different solutions. A two-level signal (TLS) that is useful for biosensing was successfully activated at the light excitation only. The detection of repeatable fluctuations in current, manifested as minor peaks in the I–V curves under infrared illumination, confirms the activation of a TLS in the biosensors. The TLS demonstrates a linear dependence of its amplitude in relation to intensity. Moreover, we performed TLS studies in MgCl₂ solutions of different concentrations. The results indicate that the FET devices incorporating a gold antenna have considerable potential for the excitation of TLS, thus allowing the sensitivity of the biosensors to be about 300 % enhanced.

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带领结天线的硅纳米线场效应晶体管生物传感器

在这项研究中，我们利用绝缘体上硅（SOI）晶圆制造了高质量的液态栅极全方位硅纳米线场效应晶体管（FET）生物传感器，该传感器具有金领结天线。在940 nm发光二极管（LED）光激发下，研究了新型NW场效应管在不同溶液下的电学和噪声特性。仅在光激发下就成功激活了用于生物传感的双电平信号（TLS）。在红外照射下，可重复检测到电流波动，表现为I-V曲线上的小峰，证实了生物传感器中TLS的激活。TLS的振幅与强度呈线性关系。此外，我们在不同浓度的MgCl2溶液中进行了TLS研究。结果表明，采用金天线的FET器件具有相当大的激发TLS的潜力，从而使生物传感器的灵敏度提高了约300%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.