An understanding of fracture kinetics during the layer transfer of InP

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-09-10 DOI:10.1016/j.sse.2025.109240

K. Blanco , F. Mazen , T. Salvetat , D. Landru , F. Rieutord

引用次数: 0

Abstract

The layer transfer of InP with the Smart Cut™ technology shows an original behavior, with the existence of a transition temperature, above which fracture occurs rapidly and below which it never spontaneously happens. Using microcracks observation and measurement of the amount of H₂ inside cracks, we show that the existence of the two regimes is due to a competition between a trapping of implanted hydrogen inside the cracks and its out-diffusion into the bonded structure.

查看原文本刊更多论文

InP层间传递过程中断裂动力学的认识

采用Smart Cut™技术的InP层间转移表现出原始行为，存在一个转变温度，高于该温度会迅速发生断裂，低于该温度则不会自发发生断裂。通过对微裂纹的观察和对裂纹内H2含量的测量，我们发现这两种状态的存在是由于在裂纹内注入的氢的捕获和向外扩散到键合结构之间的竞争。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.