Construction of BiOI/UiO-66(Ce/Fe) S-scheme heterojunction for enhancing photocatalytic activity

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-09-12 DOI:10.1016/j.mssp.2025.110033

Rongrong Yu , Jingjing Wang , Xinyu Zhi , Danyi Yang , Yongqi Zhao , Guifeng Chen , Chengchun Tang , Yi Fang

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Abstract

With growing concerns about antibiotic contamination in water environments, developing efficient photocatalysts for tetracycline (TC) degradation has become imperative. In this study, a novel nanoflower-like BiOI/UiO-66(Ce/Fe) S-scheme heterojunction photocatalyst was developed for efficient TC degradation under visible light. Experimental evaluations revealed that the optimized 0.05-Bi/U(Ce/Fe) sample achieved 99.5 % TC degradation efficiency, maintaining 88.8 % of its initial activity after four consecutive cycles. The superior photocatalytic activity arises from three synergistic mechanisms: Fe³⁺ doping modulates the band structure to broaden visible-light absorption, while the synergistic effect of Ce⁴⁺/Ce³⁺ and Fe³⁺/Fe²⁺ redox pairs optimizes charge transport. The internal electric field at the BiOI/UiO-66(Ce/Fe) heterojunction enhances charge separation while maximizing the redox capacity of the photocatalyst. Radical capture experiments and LC-MS analysis confirmed ·O₂⁻ and ·OH as the dominant reactive radicals, with proposed possible degradation pathways. Thus, a new synergistic strategy for designing efficient photocatalysts is proposed in this work.

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构建BiOI/UiO-66(Ce/Fe) s型异质结提高光催化活性

随着人们对水环境中抗生素污染的日益关注，开发高效的四环素降解光催化剂势在必行。在这项研究中，开发了一种新型的纳米花状BiOI/UiO-66(Ce/Fe) S-scheme异质结光催化剂，用于可见光下高效降解TC。实验结果表明，优化后的0.05-Bi/U（Ce/Fe）样品的TC降解效率达到99.5%，连续4次循环后仍保持88.8%的初始活性。优异的光催化活性源于三个协同机制：Fe3+掺杂调节能带结构以扩大可见光吸收，而Ce4+/Ce3+和Fe3+/Fe2+氧化还原对的协同作用优化电荷输运。BiOI/UiO-66（Ce/Fe）异质结处的内部电场增强了电荷分离，同时最大化了光催化剂的氧化还原能力。自由基捕获实验和LC-MS分析证实·O2−和·OH是主要的活性自由基，并提出了可能的降解途径。因此，本文提出了一种新的协同策略来设计高效的光催化剂。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.