Unravel the Role of Atomic Layer Deposited Al2O3 with Different Precursors on Optoelectronic Properties of IGZO Synaptic Transistors

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials Pub Date : 2025-09-09 DOI:10.1002/aelm.202500052

Yanzhuo Wei, Guohui Li, Hongwei Hao, Chen Chen, Dongdong Li, Yanxia Cui, Shan‐Ting Zhang

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Abstract

Extending the visible light response of indium gallium zinc oxide (IGZO) phototransistors is crucial for advanced optical neuromorphic computing and artificial visual perception systems. Using water (H2O) as the oxidant during atomic layer deposition of aluminum oxide (Al2O3) interlayer introduces hydroxyl impurities within IGZO, generating subgap defects that boost photo‐sensitivity (≥106) and photo‐responsivity (≥0.1 A W−1) under 420–620 nm visible light stimuli. The resultant IGZO/Al2O3(H2O) synaptic transistor successfully emulates visible‐light‐driven plasticity. In comparison, the Al2O3 using ozone (O3) as the oxidant is found to produce lesser defects within IGZO but creates a decent amount of negative fixed charges at the interface, improving the contact properties between IGZO and source/drain electrodes. Through innovative experimental design and in‐depth surface analysis, this work offers new insights into the microscopic origin responsible for subgap absorption and contact properties in IGZO/Al2O3 structure, serving as guidelines toward designing scalable synaptic devices with enhanced optoelectronic properties.

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揭示不同前驱体Al2O3原子层沉积对IGZO突触晶体管光电性能的影响

扩展铟镓锌氧化物（IGZO）光电晶体管的可见光响应对于先进的光学神经形态计算和人工视觉感知系统至关重要。在氧化铝（Al2O3）中间层的原子层沉积过程中，使用水（H2O）作为氧化剂在IGZO中引入羟基杂质，产生子隙缺陷，在420-620 nm可见光刺激下提高光敏性（≥106）和光响应性（≥0.1 A W−1）。所得的IGZO/Al2O3（H2O）突触晶体管成功地模拟了可见光驱动的可塑性。相比之下，使用臭氧（O3）作为氧化剂的Al2O3在IGZO内产生较少的缺陷，但在界面处产生了相当数量的负固定电荷，改善了IGZO与源极/漏极之间的接触性能。通过创新的实验设计和深入的表面分析，这项工作为IGZO/Al2O3结构中子间隙吸收和接触特性的微观起源提供了新的见解，为设计具有增强光电特性的可扩展突触器件提供了指导。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.00

自引率

3.20%

发文量

433

期刊介绍： Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.