Compact Modeling of Process Variation and Reliability Predictions for Nanosheet Gate-All-Around FET

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2025-07-15 DOI:10.1109/TDMR.2025.3589379

Mengge Jin;Chao Wang;Siyi Xu;Yang Shen;Yuhang Zhang;Bingyi Ye;Shaoqiang Chen;Xinyu Dong;Fei Lu;Ziyu Liu;Xiaojin Li;Yanling Shi;Yabin Sun

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Abstract

In this work, a semi-analytical compact model is developed to quantify the impact of random process variations on nanosheet field-effect transistors (NSFETs) at the 3nm technology node. Three primary sources of variability work function variation (WFV), line width roughness (LWR), and gate edge roughness (GER) are systematically analyzed. By extracting and calibrating empirical parameters, the proposed model accurately captures the statistical trends of process-induced fluctuations across a broad range of conditions. The model is integrated into the BSIM-CMG framework for circuit-level variability assessment, enabling comprehensive evaluation of performance deviations. Simulation results indicate that WFV dominates the overall reliability degradation, leading to energy variations from -12% to +24%. This study provides a refined predictive framework for assessing process-induced reliability risks and optimizing circuit design in advanced semiconductor technologies.

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纳米片栅极全能场效应管工艺变化的紧凑建模与可靠性预测

在这项工作中，开发了一个半解析紧凑模型来量化随机工艺变化对纳米片场效应晶体管（nsfet）在3nm技术节点上的影响。系统分析了变率的三个主要来源：功函数变差（WFV）、线宽粗糙度（LWR）和闸门边缘粗糙度（GER）。通过提取和校准经验参数，所提出的模型在广泛的条件范围内准确地捕获了过程引起的波动的统计趋势。该模型被集成到BSIM-CMG框架中，用于电路级变异性评估，从而能够对性能偏差进行全面评估。仿真结果表明，WFV主导了整体可靠性退化，导致能量变化从-12%到+24%。本研究为评估先进半导体技术中工艺引起的可靠性风险和优化电路设计提供了一个完善的预测框架。

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.