Investigation on Electrostatic Discharge and Surge Robustness of Silicon Carbide High-Voltage Devices

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2025-07-31 DOI:10.1109/TDMR.2025.3594470

Ya-Zhi Hu;Ming-Dou Ker

引用次数: 0

Abstract

This work presents a comprehensive study on the electrostatic discharge (ESD) and surge robustness of 4H-SiC vertical double-implanted MOSFETs (VDMOSFETs). The ESD analysis includes human-body-model (HBM) and transmission-line-pulse (TLP) testing across various stress modes, complemented by transient waveform measurements and TCAD simulations. The surge analysis also introduces the transient analysis and TCAD simulation. Both single and repetitive surge stress surge tests are conducted to evaluate electrical degradation behavior. In both HBM ESD and surge tests, GS and –DG modes are vulnerable to gate oxide breakdown. Physical failure analysis techniques, including Optical Beam Induced Resistance Change (OBIRCH), Scanning Electron Microscopy (SEM), and Focused Ion Beam (FIB) techniques, are used to identify damage locations and failure mechanisms of the failure samples.

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碳化硅高压器件静电放电和浪涌稳健性研究

本文对4H-SiC垂直双植入mosfet （vdmosfet）的静电放电（ESD）和浪涌稳健性进行了全面的研究。ESD分析包括各种应力模式下的人体模型（HBM）和传输线脉冲（TLP）测试，以及瞬态波形测量和TCAD模拟。浪涌分析还介绍了暂态分析和TCAD仿真。进行单次和重复冲击应力冲击试验来评估电退化行为。在HBM ESD和浪涌测试中，GS和-DG模式都容易受到栅极氧化物击穿的影响。物理失效分析技术，包括光束诱导电阻变化（OBIRCH）、扫描电子显微镜（SEM）和聚焦离子束（FIB）技术，用于识别失效样品的损伤位置和失效机制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.