Monitoring Metallized Film Capacitor Health: A Method for Estimating Capacitance Amid Short-Term Failures Due to Self-Healing

IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Yushuang He;Feipeng Wang;Hongming Yang;Archie James Johnston;Xiao Zhang;Jian Li
{"title":"Monitoring Metallized Film Capacitor Health: A Method for Estimating Capacitance Amid Short-Term Failures Due to Self-Healing","authors":"Yushuang He;Feipeng Wang;Hongming Yang;Archie James Johnston;Xiao Zhang;Jian Li","doi":"10.1109/TDMR.2025.3572512","DOIUrl":null,"url":null,"abstract":"Metallized film capacitors (MFCs) are valued for their ability to withstand high-electric-fields, yet they face short-term failure risks when subjected to overvoltage-induced self-healing (SH). This paper presents a monitoring method designed to address the challenges posed by multiple instances of SH in pulsed power applications. Traditional capacitance estimation using sampled current during SH is hindered by the significant arc current. To address this, the study explores the dynamic interplay between sampling current, arc current, and MFC current throughout the SH process. The introduction of Kalman filtering effectively mitigates the impact of noise signals on capacitance monitoring during the short-term cumulative discharge process of SH. Experimental and simulation results attest to the efficiency of the proposed approach, demonstrating an estimation error of less than 1%. Furthermore, a thorough structural analysis of MFCs demonstrates that the proposed method can effectively identify the transition from isolated, safe SH behavior to clustered, disruptive SH events, thereby enabling timely intervention to prevent severe damage.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"25 3","pages":"638-648"},"PeriodicalIF":2.3000,"publicationDate":"2025-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Device and Materials Reliability","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11010092/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract

Metallized film capacitors (MFCs) are valued for their ability to withstand high-electric-fields, yet they face short-term failure risks when subjected to overvoltage-induced self-healing (SH). This paper presents a monitoring method designed to address the challenges posed by multiple instances of SH in pulsed power applications. Traditional capacitance estimation using sampled current during SH is hindered by the significant arc current. To address this, the study explores the dynamic interplay between sampling current, arc current, and MFC current throughout the SH process. The introduction of Kalman filtering effectively mitigates the impact of noise signals on capacitance monitoring during the short-term cumulative discharge process of SH. Experimental and simulation results attest to the efficiency of the proposed approach, demonstrating an estimation error of less than 1%. Furthermore, a thorough structural analysis of MFCs demonstrates that the proposed method can effectively identify the transition from isolated, safe SH behavior to clustered, disruptive SH events, thereby enabling timely intervention to prevent severe damage.
监测金属化薄膜电容器的健康状况:一种在自愈短期失效时估计电容的方法
金属化薄膜电容器(mfc)因其承受高电场的能力而受到重视,但当受到过压诱导的自愈(SH)时,它们面临短期失效风险。本文提出了一种监测方法,旨在解决脉冲功率应用中多个SH实例所带来的挑战。传统的电容量估算方法是通过采样电流来实现的,但电弧电流的影响很大。为了解决这个问题,本研究探讨了在整个SH过程中采样电流、电弧电流和MFC电流之间的动态相互作用。卡尔曼滤波的引入有效地减轻了噪声信号对SH短期累积放电过程中电容监测的影响。实验和仿真结果证明了该方法的有效性,表明估计误差小于1%。此外,对mfc的全面结构分析表明,所提出的方法可以有效识别从孤立的、安全的SH行为到聚集的、破坏性SH事件的转变,从而能够及时干预以防止严重损害。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Transactions on Device and Materials Reliability
IEEE Transactions on Device and Materials Reliability 工程技术-工程:电子与电气
CiteScore
4.80
自引率
5.00%
发文量
71
审稿时长
6-12 weeks
期刊介绍: The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.
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